Bottom Anti Reflective Coating (BARC) materials are generally used to minimize reflection of incident light from the
substrate (Rsub). As IC manufactures move to high NA systems to meet the patterning requirements for next generation
technology as well as the use of new lower dielectric constant materials in the back-end-of-line dielectric, the
requirements for developing BARC materials with new properties such as faster strip rate and properly tuned optical
properties (n = refractive index and k=extinction coefficient) are essential. Some photoresist patterning schemes may
also require a dual BARC system such as tri-layer patterning (TLP), which is undergoing extensive evaluation in
academia and industries. This work focuses on Honeywell's next generation DUO193 material (DUO193FS), which is a
siloxane-based polymer with an organic 193 nm chromophore attached to it. The effects of additives for adjusting strip
rate in a wet chemical stripper, while maintaining chemical resistance to a photoresist developer, 2.38% TMAH in water
are discussed. Different spectroscopic studies are performed to elucidate the mechanism of faster strip rate. Solvation of
silanol groups and their orientation in the presence of additives are found to be secondary mechanism. The primary
reason for enhanced strip rate is attributed to the addition of additives A and B, which lower bulk density of the solid
film. DUO193FS can be stand alone BARC or used with another BARC as part of a dual BARC system to further
minimize Rsub, maintaining resistance to 2.38% TMAH, planarizing any underlying topography and keeping the final
film strip rate high.
This work discusses the development and characterization of Honeywell's middle layer material, UVAS, for trilayer
patterning. The UVAS polymer contains high Si content constructed by polymerizing multiple monomers selected to
produce a film that meets the requirements as a middle layer for trilayer patterning. Results of ArF photoresist patterning
evaluations, plasma and wet etch studies, and photoresist and full stack rework tests will be presented and discussed. ArF
photoresist patterning tests show that UVAS exhibits organic BARC like performance with respect to MEEF (Mask
Error Enhancement Factor), DOF (Depth of Focus) and EL (Exposure Latitude). Shelf life data shows that UVAS
maintains very stable properties even after 6 months storage at room temperature. We will also briefly discuss
investigation of amine or nitrogen-based contaminant blocking by the UVAS middle layer.
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