Prof. Takashi Matsuoka Profile

Prof. Takashi Matsuoka

Professor at Tohoku Univ

SPIE Involvement:

Author

Publications (5)

Proceedings Article | 21 January 2012 Paper

Optical properties of the periodic polarity-inverted GaN waveguides

Ryuji Katayama, Yujiro Fukuhara, Masahiro Kakuda, Shigeyuki Kuboya, Kentaro Onabe, Syusai Kurokawa, Naoto Fujii, Takashi Matsuoka

Proceedings Volume 8268, 826814 (2012) https://doi.org/10.1117/12.909831

KEYWORDS: Waveguides, Gallium nitride, Optical properties, Photonic crystals, Diffraction gratings, Crystals, Reflectivity, Waveguide modes, Nanophotonics, Current controlled current source

Read Abstract +

Proceedings Article | 24 January 2011 Paper

Paving the way to high-quality indium nitride: the effects of pressurized reactor

Takashi Matsuoka, Yuhuai Liu, Takeshi Kimura, Yuantao Zhang, Kiattiwut Prasertsuk, Ryuji Katayama

Proceedings Volume 7945, 794519 (2011) https://doi.org/10.1117/12.869771

KEYWORDS: Indium nitride, Crystals, Diffraction, Nitrogen, Sapphire, Gallium nitride, Vapor phase epitaxy, X-ray diffraction, Single crystal X-ray diffraction, Solids

Read Abstract +

Proceedings Article | 4 February 2008 Paper

Progress in MOVPE-growth of InGaN and InN

Takashi Matsuoka

Proceedings Volume 6900, 69000S (2008) https://doi.org/10.1117/12.768644

KEYWORDS: Gallium nitride, Indium nitride, Indium gallium nitride, Crystals, Light emitting diodes, Gallium, Nitrogen, Aluminum nitride, Gallium arsenide, Sapphire

Read Abstract +

Proceedings Article | 8 February 2007 Paper

New possibility of MOVPE-growth in GaN and InN: polarization in GaN and nitrogen-incorporation in InN

Takashi Matsuoka

Proceedings Volume 6473, 647302 (2007) https://doi.org/10.1117/12.707607

KEYWORDS: Gallium nitride, Sapphire, Indium nitride, Crystals, Polarization, Nitrogen, Indium, Zinc oxide, Hydrogen, Temperature metrology

Read Abstract +

Proceedings Article | 6 December 2005 Paper

Nitride semiconductors for blue lasers (Invited Paper)

Takashi Matsuoka

Proceedings Volume 6050, 60500K (2005) https://doi.org/10.1117/12.659862

KEYWORDS: Gallium nitride, Indium gallium nitride, Crystals, Light emitting diodes, Gallium, Polarization, Sapphire, Indium nitride, Nitrogen, Semiconductors

Read Abstract +

Conference Committee Involvement (2)

Optomechatronic Micro/Nano Devices and Components II

4 October 2006 | Boston, Massachusetts, United States

Optomechatronic Micro/Nano Devices and Components

5 December 2005 | Sapporo, Japan

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years