In the course of carrying out the present work, it was stated that a parasitic surface nano-structurization is peculiar to reflective relief-phase holograms obtained on thin layers of a chalcogenide glassy semiconductor (CGS). The results of experimental researches of the effect of a relief height for reflective relief-phase holograms on the parameters of their surface parasitic nano-structurization are presented in this paper. With the use of data obtained applying atomic force microscope (AFM) Solver P-47 and software complex “Nova”, it was defined a short-wave boundary for applicability of such holograms. In addition to the conventional software complex “Nova”, aiming at reducing time necessary for determination of a short-wave boundary for relief-phase hologram applicability, there was developed a software module, which operation is based on the determination of the averaged-out over a basic area (scanning area) relief profile shape of the hologram structure, the definition of root-mean-square roughness (RMSR) values of its surface averaged-out over the same basic area, and on the subsequent computation of the boundary wavelength for the hologram applicability. The determined short-wave boundary value came to 80nm. Starting from this value, the holograms with the relief height optimal from the view of maximal diffraction efficiency meet the Marechal’s criterion σ ≤ λ/27 (σ - rootmean- square roughness parameter) and the criterion of permitted light diffusion σ ≤ λ/100. Thus, the level of light diffusion and aberration permitted for precision optical systems is ensured in a reconstructed with their use image.
Modern photolithography is based on the use of excimer lasers with the radiation wavelength of 193 nm and 157 nm.
Further steps aimed at achieving a higher resolution of displayed structures lead to a reduction of the radiation
wavelength and a considerable rise of the cost of lithographic system. In this connection, the search of alternative image
generation methods being suitable for the use in extreme short-wave photolithography is becoming especially urgent.
In order to develop an alternative method based on optical holographic principles, two versions of schemes for recording
and reconstruction of relief-phase reflection holograms providing speckle-free images of two-dimensional microscopic
objects have been scientifically justified and experimentally verified. The first of them is based on the replacement of
projection objective with relief-phase reflection hologram-projector registered on chalcogenide glassy layer. The second
one is closed to the near-field correction being conventional for photolithography.
As a result of this work, samples of holograms-projectors forming an image of the photolithographic test-object with the
characteristic size of 0.8 μm at the wavelength of 0.488 μm were obtained. On the whole, the results show an availability of further works aimed at the implementation of optical holographic methods into short-wave photolithography.
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