In the process of crack identification for round logs, conventional edge extraction cannot effectively suppress noise because of the tree's annual ring lines and the similarity between the burr noises during cutting and the gray level of the target. Therefore, it is no easy to extract the target crack. The method of continuous gray-scale transformation enhancement is put forward in this thesis to increase the difference between the gray level of the background pixel and the gray level of the target so that can obtain an ideal pre-processed image. In the process of image preprocessing, the method of continuous gray-scale transformation enhancement is applied, that is to combine the gray-scale transformation enhancement and the non-linear filtering process so that can realize the preprocessing of the original image. The gray level difference between the extraction target and the background is increasing under the premise of preserving the image-extraction features. In the extraction process, the extracted target crack image is obtained through utilizing the localization minimum in mathematical morphology and then the compound morphological algorithm is designed based on the basic algorithm of mathematic morphology so as to obtain the target crack image which is connected by the edge curves. Results The MATLAB image processing algorithm is used to simulate each step of the method. The results show that the extracted target crack images are ideal. The mentioned algorit can not only ensure the integrity of the extraction target, but also can suppress the noise very well so that can satisfy the needs during the extraction of complex background images, especially the images with little difference between the background gray level and the extraction target gray level.
Luminance gain is an important parameter to evaluate the light intensity enhancement ability of the low light level image intensifier assembly. The higher the luminance gain, the easier the receiver is to sense and recognize. However, luminance gain is not a directly measurable physical quantity. Thus, luminance gain measuring devices have non-standard specific properties. Based on the principle of luminance gain measuring specified in the standard, the structure and measurement methods of measurement devices are analyzed, the error and optimization methods of two major measurement methods are compared, and the distribution of the combined uncertainty of measuring luminance gain is studied. Then, an optimized measurement scheme of luminance gain of low light level image intensifier assembly is put forward. Based on this scheme, a comprehensive measurement uncertainty analysis is carried out and the calculated luminance gain measurement extended combined uncertainty is about 6.7% (k=2). The results are of great significance for improving the measurement accuracy of luminance gain of low light level image intensifier assembly.
The MCP current gain of low-light-level image intensifier is an important indicator for evaluating the detection characteristics of low-light-level image intensifier, and it is essential to achieve accurate measurement. In this paper, the method and device for measuring the MCP current gain of the micro-light image intensifier are established. The process of measuring the magnitude and the influencing factors when measuring the MCP current gain of low-light image intensifier, and the measurement uncertainty of the device is carried out. The MCP current gain measurement has an extended uncertainty of 5.27%. It can meet the requirements of high precision measurement of MCP current gain. of low-light-level image intensifier. The research results are used to assist in the development of low-light-level image intensifier technology, providing an effective and accurate detection method for further improvement and improvement of its technical performance.
Ion barrier film (IBF) on the input side surface of Micro-channel Plate (MCP ) has a dual role in the high electron transmittance and high ionic blocking rate, and the quality of the film is very strict, so to choose a good coating way to meet the application of IBF-MCP in the third image intensifier is very important. Ion beam sputtering deposition (IBSD) technology is a relatively mature coating technology which can obtain a dense strong adhesion and smooth, high-quality film. This paper is carried out from the quality analysis on surface morphology, crystal structure and coating quality and comparison with qualified film to determine a better way to prepare IBF on the input side surface of MCP.
First proximity voltage is the voltage between the cathode of Low Light Level image intensifier and the input surface of
Micro-channel plate(MCP). There are so many factors influencing the image intensifier performance, and the first
proximity voltage is one of the most important factors that can not be ignored. Based on the theory analysis and test of
different proximity voltage on the gain、signal-to-noise ratio and equivalent background noise, this test has studied on the
important performance of Gen III image intensifier effected by the proximity voltage. By the experimental study, the
increase of first proximity voltage to a certain extent can improve gain、signal-to-noise ratio and equivalent background
noise at the same time. The main cause of this phenomenon is that the increase of proximity voltage can enlarge the
incident electron energy, and then improve the quantum efficiency of the incident electron; meantime, stray electron
produced by field emission at the action of the electric field of filmed-MCP will lead to equivalent background
deterioration. Ultimately we conclude that: 1) Signal to noise is proportional to the square of he cathode sensitivity,
increases with the first collision energy of the incident electron, especially at 200-500ev. 2)In the increasing process of
voltage from 300v to 800v, the gain of filmed-MCP increases rapidly, but lower again when Upk increases further because
of gain self-saturation; lgG and lgUpk are linear relationship, thus the curve can intuitively demonstrate the relationship
between them. 3) Stray electron produced by field emission at the action of the electric field of filmed-MCP will lead to
equivalent background deterioration, but will not exceed the requirements of technical specifications(2.5×10-7lx).
The ideal status of the GaAs photocathode bonding assembly is as fellows: the GaAs photocathode should
not have additional stress; the crystal lattice should keep integrity after deposited Si3N4 reflection reducing
coating and bonging process that GaAs epitaxial material on a glass window. In order to estimating the
bonding quality of the GaAs photocathode bonding assembly, integral photoluminescence intensity was
calculated on the ideal bonding condition. Assuming the energy of incident light was absorbed by GaAs
active layer except reflection, according to the optical character of the GaAs photocathode bonding
assembly, the value was calculated. This value could be the standard to assess the quality of the GaAs
photocathode bonding assembly and improve the bonding technology that the GaAs epitaxial material is
bonded to a glass window.
As an III-V semiconductor material, InxGa1-xAs can response from 0.87μm (GaAs) to 3.5μm (InAs) by tuning the relative amount of Gallium in the alloy. In order to get better the response of the photocathode in near infrared
radiation region (1~1.7μm), InGaAs/InP heterostructure is widely used for photocathode material. The only
composition of In0.53Ga0.47As is lattice matched to the InP substrate and their spectral response is from 0.9μm to 1.6μm. thus In0.53Ga0.47As/InP heterostructure is selected for near infrared response photocathode. The In0.53Ga0.47As layer has been grown on InP substrate used for photocathode by solid source molecular beam epitaxiy (SS-MBE). The photocathode samples were grown to optimize the growth temperature, III/V ratio and growth rate. The In0.53Ga0.47As layer crystalline quality and component were performed by applying high resolution X-ray diffractometer, surface roughness investigations were performed by applying atomic force microscopy. The
Be doping characteristic was checked by the electrochemical capacitance-voltage(ECV). The optical performance of the photocathode is measured by the spectral meter. The collected information is being used to correct and enhance growth characteristics and optimize InGaAs/InP photocathode structure to increase spectral response and quantum efficiency.
KEYWORDS: Oxides, Data storage, Chemical reactions, Failure analysis, Analytical research, Capacitance, Reliability, Chemical analysis, Accelerated life testing, Process control
This paper investigates date retention ability of EEPROM cells for a given voltage or temperature by theory and
experiment. The expression of EEPROM date retention is derived. In the temperature acceleration experiment, the
logarithm of device inactivation time have linear ratio with temperature according to Arrhenius formula and the device
life retention was acquired in the various temperature. According to Arrhenius equation, lifetime curve is deduced. In the
electric acceleration experiment, because of the charge leaking on the floating-gate, the threshold voltage would decrease
gradually. In the log-log plot, the decrease efficiency of threshold voltage have linear ratio with time. Under the
assumption that the charge loss mechanism is Fowler-Nordheim tunneling through the thin oxide, date retention time of
EEPROM cells is derived and the experience formula is derived by experiment.
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