Integrated electro-optic tuning devices are essential parts of optical communication, sensors, and optical machine learning. Among the available materials, silicon is the most promising for on-chip signal processing and networks. However, silicon is limited owing to the absence of efficient Pockels electro-optic tuning. Herein, we propose a new hybrid silicon-barium-titanate (Si-BTO) integrated photonic platform, in which the BTO thin film is deposited by the chemical solution deposition (CSD) method. A tunable racetrack resonator is demonstrated to confirm the Pockels electro-optic tuning potential of the BTO thin film. The hybrid racetrack resonator has a tuning efficiency of 6.5 pm/V and a high-power efficiency of 2.16 pm/nW. Moreover, the intrinsic quality factor of the fabricated racetrack resonator is 48,000, which is the highest in hybrid Si-BTO platforms, to the best of our knowledge. The high-speed test verifies the stability of the racetrack resonator. The hybrid Si-BTO technology based on the CSD method has the advantages of low equipment cost and simple fabrication process, which holds promise for low-power electro-optic tuning devices.
High-quality factor(Q) waveguide ring resonators (WRRs) are essential components of the resonator-integrated optical gyroscope (RIOG). The single-mode and multimode silicon oxynitride (SION) WRRs are investigated in this paper. The optical, resonance, and polarization properties are characterized. The intrinsic Q of single-mode WRR is 8.25×105 . And the multimode WRR achieves an intrinsic Q of 1.02×106 , corresponding to the waveguide propagation loss of 0.3 dB/cm. The designed multimode SION WRRs can be used as a critical sensing element to enhance RIOG performance further. Keywords: High Q ring resonators, Multi-mode SION waveguide, Integrated optics.
A polarization-insensitive four-channel wavelength-division multiplexing (WDM) (de)multiplexer based on Mach-Zehnder interferometers is proposed and demonstrated. Polarization insensitivity can be achieved by utilizing the square waveguides and bend directional couplers (bend DCs) based on silicon oxynitride (SiON) waveguides. The WDM (de)multiplexer has an 800GHz spacing for LAN-WDM application. Two stages of cascaded MZIs are utilized to achieve a four-channel spectral response. For the realized WDM (de)multiplexer with Gaussian-like passbands, the polarization-dependent losses (PDL) are less than 0.7dB for all 1-dB passbands. The insertion losses are <~ 3dB and the crosstalk is <~ -12dB for both TE and TM polarizations at channel central wavelengths.
We report the demonstration of Si-based waveguide Ge1-xSnx photodetector (PD) at L-band (1565-1625 nm), U-band (1625-1675 nm), and 2μm light detection, optical and electrical properties are studied by using simulation models. With introduction of 4.5% Sn into Ge, the GeSn waveguide PD with evanescent coupling exhibits a high responsivity of 1.25 A/W, dark current is lower than 12 nA. This work provides a new choice for future infrared detection, beneficial to needs of broadband spectrum communication, and compatible with CMOS circuits.
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