In this paper we report the use of projection optical lithography to pattern micron-sized features on
100 μm thick PEN foils. A foil-on-carrier lamination process was developed to ensure a good
dimensional stability during the lithographic processing and imaging of the foil. A stepper based
leveling metrology was used in characterizing the surface flatness of the foil-on-carriers. A
lithography process was developed to image micron and submicron patterns on foil substrates. The
process window for 1-10 μm features was determined from focus and exposure energy experiments.
The lithographic study indicated a reproducible and excellent imaging accuracy for patterning
micron-sized features on flexible substrates. This makes the technology very suitable for the
manufacturing of electronic devices with critical dimensions in the micron and submicron range. In
addition, we made transistors-on-foil demonstrators with the developed foil-on-carrier lamination
and imaging technology.
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