Spin-orbit torque offers an efficient route to manipulate the magnetic state of magnetic materials, which is of great importance for energy-efficient applications of various spintronic devices like memory, logic, oscillator, and neuromorphic computing. Here, we propose a strategy for the realization of a spin torque gate magnetic field sensor with an extremely simple structure by utilizing the longitudinal field dependence of the spin-orbit torque driven magnetization switching. This sensor does not require any magnetic bias to achieve a linear response to the external field, which is the main cause of high cost of all types of magnetoresistance sensors. In addition, zero offset can be achieved in the spin torque gate sensor without complicated offset compensation circuit. By employing the WTe2/Ti/CoFeB structure with both large spin-orbit torque and well-defined PMA, we demonstrate that the sensor can work linearly in the range of ±3-10 Oe with nearly zero dc offset.
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