CONFERENCE PROCEEDINGS
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Ya-Wen Lin
at Advanced Optoelectronic Technology Inc
SPIE Involvement:
Author
Publications (2)
Proceedings Article | 28 February 2012 Paper
High performance 375 nm ultraviolet InGaN/AlGaN light-emitting diodes by using a heavily Si-doped GaN growth mode transition layer
Shih-Cheng Huang, Po-Min Tu, Shun-Kuei Yang, Ya-Wen Lin, Chih-Peng Hsu
Proceedings Volume 8262, 826221 (2012) https://doi.org/10.1117/12.908146
KEYWORDS: Light emitting diodes, Gallium nitride, Ultraviolet radiation, Internal quantum efficiency, Transmission electron microscopy, Ultraviolet light emitting diodes, Metalorganic chemical vapor deposition, Indium gallium nitride, Scanning electron microscopy, Luminescence
Proceedings Article | 6 February 2012 Paper
Investigation of efficiency droop for UV LED with N-type AlGaN layer
Po-Min Tu, Jet-Rung Chang, Shih-Cheng Huang, Shun-Kuei Yang, Ya-wen Lin, Tzu-Chien Hung, Chih-Peng Hsu, Chun-Yen Chang
Proceedings Volume 8278, 82781B (2012) https://doi.org/10.1117/12.908266
KEYWORDS: Light emitting diodes, Ultraviolet light emitting diodes, Gallium nitride, Atomic force microscopy, Crystals, External quantum efficiency, Absorption, Quantum efficiency, Sapphire, Aluminum
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