Hydrogen (H2) and Argon (Ar) plasma passivation technology was investigated to improve the optical properties of the
III-V laser diodes. The main experiment was carried out in the vacuum chamber of the magnetron sputtering system. At
first, H2 and Ar plasma passivation treatment was performed on the GaAs (110) surfaces. The obtained optimum
passivation conditions were 65-W radio frequency (RF) of power and 15-min duration, the flow of hydrogen and argon
were also 20 sccm.The effect of passivation was characterized by photoluminescence (PL) measurements,the PL
intensity of GaAs(110) after passivating was about 10 times of that the unpassivated samples. And then the laser cavity
surfaces were treated under the optimum passivation conditions.Consequently,compared with the unpassivated lasers
with only AR/HR-coatings, the catastrophic optical damage (COD) threshold value of the passivated lasers by H2 and Ar
plasma treatment was increased by 30 per cent.In the 20 ~ 80°C temperature range, characteristic temperature value of
128K was incresed by 11.3 per cent.The processing is simple and high efficient, can be widely applied to the III-V laser
diode devices.
GaAs films have been deposited on substrates of quartz glass by radio frequency magnetron sputtering technique in the atmosphere with or without hydrogen. The GaAs and hydrogen doped GaAs thin films have been studied by X-ray diffraction, scanning electron microscopy. Moreover radial distribution function and pair correlation function
analysis method have been established in order to analyze microstructure further. The as-deposited films are
amorphous at room temperature. The distances between the first neighboring atoms of a-GaAs:H don't change compared
with a-GaAs:H. But Hydrogen restrains reuniting of crystal grain while sputtering and short range regular domains of
a-GaAs:H are smaller than that of a-GaAs. In addition, the morphology of GaAs films is coarser than that of GaAs:H
thin film. The content of hydrogen and the various types of hydrogen bonding have been investigated using Fourier
transform infrared absorption spectroscope.
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