We developed a Time Delay Integration (TDI) CCD image sensor that consists of four multispectral bands (B1-B4 zone)
and one panchromatic band (P zone) in an integrated, compact package. The B zones have a horizontal resolution of 3k
columns, with a pixel size of 28 μm x 28 μm. The P zone has a horizontal resolution of 12k columns, with a pixel size of
7 μm x 7 μm. The large pixel size of B zones provides excellent colour differentiation even under extremely low light
intensity, while the small pixel size and the large pixel number of broad band zone (P zone) provides high resolution
images within a wide spectrum range. By utilizing a particularly designed hybrid optical filter, the sensor is able to
collect blue, green, red, and near infrared images with only negligible optical crosstalk. The sensor uses selectable
outputs and data rate: 2 or 1 outputs running at 16.5 MHz (B1-B4 Zone) per output, and 8 or 4 outputs running at 33
MHz (P Zone) per output. Special design features minimize optical crosstalk between the image zones, and achieve a
low signal noise: ≤ 85 e- in B zone, and ≤ 35 e- in P zone. To acquire spectral reflectance signatures with good fidelity,
the image sensor must be very sensitive to weak light in some spectral bands and cannot be over exposed to light in other
spectral bands. To fulfil this requirement, the sensor is designed to show a balanced responsivity in all the image zones.
Over all, the sensor demonstrates outstanding performance, providing exceptional images that are crucial for remote
sensing applications.
We studied changes in photoluminescence yield of 9,10-bis (2-naphthyl)-2-t-butylanthracene (TBADN), a commonly
used blue emitter in organic light emitting devices (OLEDs). Our studies show that, unlike in case of tris
(8-hydroxyquinoline) aluminum (AlQ3), current flow does not bring about a significant change in TBADN
photoluminescence yield under 400nm excitation. We attribute the different behavior of TBADN to its bipolar carrier
transport nature, which, in comparison to AlQ3, does not facilitate the build-up of significant space charges. Excitation at
360nm, however, leads to a rapid decrease in photoluminescence yield, even in the absence of electrical stressing,
revealing that higher excited states of TBADN are less stable, and suggesting they could be playing a role in OLED
electroluminescence degradation.
We measured electric-field-induced fluorescence quenching (EFIFQ) under various temperatures in both undoped and
fluorescent dye-doped tris(8-hydroxyquinoline )aluminum (AlQ3) layers of organic light-emitting devices (OLEDs).
Results show that for a given temperature doped AlQ3 layers demonstrate smaller EFIFQ than undoped ones. The
phenomenon is attributed to the narrower energy band-gap of the guest molecule relative to that of the host material,
which makes it less prone to electric-field-induced dissociation of the excited state. Results also show that for a given
doping condition increasing the temperature leads to an increase in EFIFQ, indicating that the EFIFQ is a thermally
assisted process.
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