Mr. Yin Zhang Profile

Yin Zhang

at Shanghai Jiao Tong Univ

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Proceedings Article | 19 March 2009 Paper

Study of Si-doped Sb2Te3 film for low power and good data retention phase-change memory application

Yin Zhang, Jie Feng, Bingchu Cai

Proceedings Volume 7125, 71251T (2009) https://doi.org/10.1117/12.822568

KEYWORDS: Crystals, Annealing, Resistance, Tellurium, Antimony, Temperature metrology, Switching, In situ metrology, Germanium, Calorimetry

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Electrical, thermal and crystallization properties of 20at.% Si-doped Sb2Te3 film were investigated and compared to those of conventional Ge₂Sb₂Te₅ film by annealing temperature-dependent resistivity measurement, differential scanning calorimetry (DSC) and in situ time-dependent resistance measurement at various isothermal annealing temperatures. The resistivity of this doped Sb₂Te₃ film after 400 °C annealing is nearly ten times that of Ge₂Sb₂Te₅ film and its melting temperature is about 100 °C lower. The resistivity ratio can reach 10⁶ during the phase transition, accompanied with a smaller thickness change of 1.7% in contrast to that of Ge₂Sb₂Te₅ film of 6.8%. Crystallization temperature of 20at.% Si-Sb₂Te₃ film is 271 °C and maximum temperature for a 10-year lifetime is estimated to be 144 °C with crystallization activation energy of 3.65 eV, which promises better data retention than Ge₂Sb₂Te₅ film. Micrometer-sized phase-change memory devices were also fabricated and examined. Lower power consumption is obtained in the RESET operation of the memory device using 20at.% Si-Sb₂Te₃, which should be attributed to higher crystalline resistivity and lower melting temperature of the film.

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