Ushio's LDP (Laser-assisted Discharge-produced Plasma) EUV source is a plasma EUV source utilizing rotating electrodes, circulating liquid tin, repetitive pulsed high-current discharge up to 10 kHz (15 kW), trigger lasers, and a debris filter to protect the optics from the tin debris emitted from the plasma [1]. The LDP EUV source can offer excellent light performance [2-3] for various applications in the semiconductor manufacturing ecosystems and has been used for Actinic Patterned Mask Inspection (APMI) [4] and beamline applications. Ushio is dedicated to continuous development, particularly performance, reliability and cost-of-ownership (CoO). Our research involved a series of experiments to measure the brightness, power, stability, and fast ions under various discharge conditions. We also implemented a more effective design to the debris filter. Data indicate that this modification will double the collector lifetime without compromising optical transmission. As a result of quality and robustness enhancements of the modules, the source MTBM has reached five weeks and is approaching six weeks in the field.
The Laser-assisted Discharge-produced Plasma (LDP) EUV source is a system to generate EUV from discharged plasma triggered by laser on one electrode disc which is coated by tin film. The source has been proven as a highly reliable light source in EUVL high volume production. Also, LDP EUV source enables to generate high brightness with relatively larger EUV plasma, which benefits space stability as well as relatively larger plasma power. In this session, the following items will be presented. (1) LDP EUV source configuration and operation sequence. (2) LDP EUV source key performance (3) Stability Improvement (4) Reliability improvement. (5) Sample exposure application
The Laser-assisted Discharge-produced Plasma (LDP) EUV source is a system to generate EUV from discharged plasma triggered by laser on one electrode disc which is coated by tin film. The source has been proven as a highly reliable light source in EUVL high volume production. Also, LDP EUV source enables to generate high brightness with relatively larger EUV plasma, which benefits space stability as well as relatively higher plasma power. In this session, the following items will be presented. (1) LDP EUV source configuration and operation sequence. (2) LDP EUV source key performance (3) Reliability improvement. (4) Others.
The most critical enabler of actinic patterned mask inspection technology/capability has been the EUV source. In this paper, we discuss the performance and reliability improvements achieved for the LDP EUV Source (Laser-assisted Discharge Produced Plasma EUV Source) used in Intel actinic patterned-mask inspection systems. These improvements encompass several critical aspects such as EUV emission conversion efficiency, source lifetime and debris mitigation effectiveness. Optimization of the parameters that influence LDP discharge has enabled improvement to these performance indicators. Duration of continuous operation of the source has been extended by novel modification of the electrode design as well as other changes. Ion induced damage to the optical components such as downstream mirrors was mitigated by development of an effective debris mitigation approach. These improvements have significantly increased the duration of uninterrupted operation, EUV brightness level, as well as improvements in plasma stability.
The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and is currently deployed in the field. As the EUVL process is used more in the mass-production process, the requirement for EUV source for mask inspection is required more. LDP source enables the generation of high brightness with relatively large EUV plasma to fulfill these requirements. Ushio LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained. In this paper, we address the followings: (1) LDP source configuration and its monitoring system, (2) Features of LDP source for inspection purposes, (3) Recent availability in the field, (4) Improvement of source stability and cleanliness, and (5) Roadmap of source availability.
The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and beamline application and deployed in the field. LDP EUV source enables to generate high brightness with relatively larger EUV plasma by discharged plasma triggered by laser on one electrode disc which is coated by tin film. As EUVL process is used more in mass-production process, the requirement for EUV source for mask inspection is required more. USHIO LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained. In this session, the following items will be presented. (1) LDP EUV source configuration and operation sequence. (2) LDP EUV source key performance (3) Reliability improvement items. (4) High Brightness Development
The Laser-assisted Discharge-produced Plasma (LDP) EUV source has been developed as a light source for actinic mask inspection and beamline application and deployed in the field. LDP EUV source enables to generate high brightness with relatively larger EUV plasma by discharged plasma triggered by laser on one electrode disc which is coated by tin film.
As EUVL process is used more in mass-production process, the requirement for EUV source for mask inspection is required more. USHIO LDP source has overcome various issues specialized from LDP source and realized high reliability 24/7 based operation with high brightness maintained.
The Laser-assisted discharge-produced (LDP) plasma EUV source was developed as a light source for actinic mask inspection and beamline application. Since the focused laser irradiation is used to ignite the discharge, the LDP plasma has a unique feature of high brightness and high power. It can be operated at the frequency of up to 10 kHz generating <200 W/mm2/sr in-band EUV brightness at plasma. The source reliability is also proven in the field as a source for actinic mask inspection. In the paper, the key performances of the LDP source will be discussed.
Improved lithography resolution provided by EUVL simplifies the patterning process and makes it possible to use less restrictive design rules. This in turn enables cost effective scaling with extendibility. There are several technical challenges and infrastructure gaps that need to be resolved to make EUVL suitable for high volume manufacturing (HVM). These gaps relate to development of a stable and reliable high power EUV source, EUV resist and EUV compatible photomask infrastructure. Realization of Actinic patterned mask inspection (APMI) capability is a critical component of the required Photomask infrastructure [1,2]. Most critical enabler of actinic patterned mask inspection technology/capability has been the EUV source. In this contribution, we will discuss key aspects of the developed High-Volume Manufacturing (HVM) worthy LPD EUV source for APMI. These include performance aspects such as brightness and spatial position stability of the EUV emission, dynamics of the EUV-emitting plasma and long-term stability of the source
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