Ms. Young-Min Kang Profile

Young-Min Kang

at Hanyang Univ

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Author

Publications (8)

Proceedings Article | 4 December 2008 Paper

Acid diffusion length dependency for 32-nm node attenuated and chromeless phase shift mask

Jee-Hye You, Young-Min Kang, Minhee Jung, Hye-Keun Oh

Proceedings Volume 7140, 71403U (2008) https://doi.org/10.1117/12.804611

KEYWORDS: Diffusion, Photomasks, Nanoimprint lithography, Phase shifts, Critical dimension metrology, Double patterning technology, Lithography, Electroluminescence, Immersion lithography, Image processing

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Proceedings Article | 7 March 2008 Paper

Optimum dose variation caused by post exposure bake temperature difference inside photoresist over different sublayers and thickness

Young-Min Kang, Ilsin An, Do Wan Kim, Hye-Keun Oh

Proceedings Volume 6924, 69244T (2008) https://doi.org/10.1117/12.772136

KEYWORDS: Semiconducting wafers, Diffusion, Critical dimension metrology, Silicon, Photoresist processing, Photoresist materials, Chemically amplified resists, Lithography, Temperature metrology, Antireflective coatings

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In principle, the dose should not be changed to make the same linewidth if a perfect anti-reflection coating (ARC) is used for all the sublayers underneath the resist. However, the optimum dose for different sublayers and thicknesses are different even though perfect ARC is used. The post exposure bake (PEB) process of a chemically amplified resist is one of the key processes to make very small features of semiconductor device. The photo-generated acid makes the deprotection of protected polymer, and this deprotection highly depends on the PEB temperature and time. The diffusion length of acid is also strongly dependent on PEB temperature and time. As the linewidth of the device decreases, smaller diffusion length is required to reduce the roughness of the line edge and width. One of the key factors to determine the deprotection and acid diffusion is the initial temperature rising and the final real temperature inside the resist. The unpredictable temperature rising to the pre-set temperature mainly causes the variation of linewidth and the optimum dose. In order to predict the accurate PEB temperature and time dependency of the linewidth and dose, the heat transfer from the hot plate to the resist on the top of the multiply stacked sublayers over the silicon wafer has to be known since the reaction and diffusion occur inside the resist, not on the top of the bare silicon wafer. We studied heat transfer from the hot plate to the top of the resist including conductivity and thickness of each sublayer. For this purpose, a novel numerical approach incorporated with analytic method was proposed to solve the heat conduction problem. The unknowns for temperature are located only at the interfaces between layers, so that it is fast and efficient. We calculated the time that is consumed for the resist to attain the prescribed PEB temperature for the different multi stacks and thicknesses. Calculation shows that the temperature rising is different and final temperature on top of the resist is also different for various sublayers and thicknesses of theirs including resist itself. Experiment by us and others also clearly show that there is a definite temperature difference between on top of the bare wafer and on top of the resist. The effects for the different layer stacks and thicknesses are investigated to obtain proper dose and linewidth control due to different actual resist PEB temperature.

Proceedings Article | 7 March 2008 Paper

Optimum biasing for 45 nm node chromeless and attenuated phase shift mask

Young-Min Kang, Hye-Keun Oh

Proceedings Volume 6924, 692433 (2008) https://doi.org/10.1117/12.772142

KEYWORDS: Nanoimprint lithography, Photomasks, Critical dimension metrology, Optical proximity correction, Phase shifts, Lithography, Resolution enhancement technologies, Imaging systems, Polarization, Semiconducting wafers

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Proceedings Article | 1 November 2007 Paper

Critical dimension control for 32 nm random contact hole array with resist reflow process

Joon-Min Park, Young-Min Kang, Seung-Wook Park, Joo-Yoo Hong, Hye-Keun Oh

Proceedings Volume 6730, 673043 (2007) https://doi.org/10.1117/12.746518

KEYWORDS: Optical proximity correction, Photomasks, Critical dimension metrology, Photoresist processing, Optical lithography, Cadmium, Lithography, Optical arrays, Process control, Control systems

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Proceedings Article | 1 November 2007 Paper

Acid diffusion length limitation for 45 nm node attenuated and chromeless phase shift mask

Young-Min Kang, Seung-Wook Park, Hye-Keun Oh

Proceedings Volume 6730, 673042 (2007) https://doi.org/10.1117/12.746510

KEYWORDS: Diffusion, Photomasks, Phase shifts, Critical dimension metrology, Lithography, Chemically amplified resists, Optical lithography, Photoresist processing, Control systems, Photoresist materials

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Proceedings Article | 14 May 2007 Paper

Process latitude dependency on local photomask haze defect in 70-nm binary intensity mask

Young-Min Kang, Sung-Jin Kim, Jin-Back Park, Wook Chang, Seung-Wook Park, Jai-Soon Kim, Han-Koo Cho, Hye-Keun Oh

Proceedings Volume 6607, 660720 (2007) https://doi.org/10.1117/12.728983

KEYWORDS: Air contamination, Photomasks, Phase shifts, Electroluminescence, Binary data, Reticles, Semiconducting wafers, Critical dimension metrology, Semiconductors, Crystals

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Proceedings Article | 21 March 2007 Paper

Characteristics and prevention of pattern collapse in EUV lithography

Wook Chang, Eun-Jin Kim, Young-Min Kang, Seung-Wook Park, Chang-Moon Lim, Ki-Tak Won, Jai-Soon Kim, Hye-Keun Oh

Proceedings Volume 6517, 65172S (2007) https://doi.org/10.1117/12.712469

KEYWORDS: Extreme ultraviolet, Deep ultraviolet, Extreme ultraviolet lithography, Lithography, Liquids, Semiconductors, Ultraviolet radiation, Adhesives, Optical lithography, Autoregressive models

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Proceedings Article | 20 October 2006 Paper

Haze detection and haze-induced process latitude variation for low-k1 193 nm lithography

Sung-Jin Kim, Jin-Baek Park, Sung-Hyuck Kim, Hye-Young Kang, Young-Min Kang, Seung-Wook Park, Ilsin An, Hye-Keun Oh

Proceedings Volume 6349, 63492T (2006) https://doi.org/10.1117/12.685941

KEYWORDS: Air contamination, Photomasks, Critical dimension metrology, Transmittance, Spectroscopic ellipsometry, Lithography, Electroluminescence, Ellipsometry, Semiconductors, Pellicles

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Showing 5 of 8 publications

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