The development of a 4-channel×10-Gbits/s optical interconnect module based on a silicon optical bench (SiOB) is presented. The 4-channel vertical-cavity surface-emitting laser (VCSEL) and photo diode (PD) arrays are flip-chip assembled onto the pedestals of SiOB using Au/Sn solder bumps to form an SiOB-based bi-directional optical sub-assembly (BOSA) configuration. The optical coupling of VCSEL-to-multi-mode fiber (MMF) and MMF-to-PD without adding coupled optics is −5.2 and −2 dB, respectively. The wide alignment tolerances of 1-dB power variation for the transmitting and receiver parts to be ±15 μm are achieved. The clearly open 10-Gbits/s eye patterns of transmitting part as well as the 10−12-order bit error rate (BER) at the receiving part verify the proposed SiOB-based module is suitable for the application of 4-channel×10-Gbits/s optical interconnects.
In this paper, a bi-directional 4-channel x 10-Gbps optoelectronic transceiver based on this silicon optical bench (SiOB)
technology is developed. A bi-directional optical sub-assembly (BOSA), fiber ribbon assembly, PCB with high
frequency trace design, transmitter driver, and receiver TIA IC are included in this transceiver. The BOSA and PCB also
have some specific design for conventional chip-on-board (COB) process. In eye diagram measurement, the transmitter
can pass 10-G Ethernet eye mask with 25% margin at room temperature; Bit-error-rate (BER) performance from the
transmitter to receiver via 10-meter fiber can achieve 10-12 order, which confirm the transceiver's ability of 10-Gbps data
transmission per a channel.
Transmitting part of optical interconnection module with three-dimensional optical path is demonstrated. In this module,
electronic-device and photonic-device are separated on the front and rear sides of SOI substrate. The key component of
this module are 45° micro reflector and trapezoidal waveguide which are fabricated by single-step wet etching on front
side of SOI substrate. High-frequency transmission lines for 4-channel × 2.5-GHz and VCSELs are constructed on rear
side of SOI substrate. In this module, the measurement result of optical coupling efficiency is -8.09 dB, and the 1-dB
alignment tolerances are 25 μm and 26 μm on the horizontal and vertical direction, respectively. Eye diagrams are
measured at data rate of 1-Gbps and 2.5-Gbps with the 215-1 PRBS pattern and the clearly open eyes are demonstrated.
SOI-based trapezoidal waveguide with 45° reflector for non-coplanar light bending is proposed and demonstrated. The
proposed structures include 45° micro-reflector and silicon trapezoidal waveguide. Due to the SOI-based trapezoidal
waveguide with 45° reflector, light wave can be coupled into silicon waveguide easily and have higher coupling
efficiency. All of structures are fabricated using a single-step wet etching process. The RMS roughness of waveguide
sidewall and 45° micro-reflector is about 30 nm. The coupling efficiency of proposed structure is -4.51 dB, and
misalignment tolerance are 42 μm at horizontal direction and 41 μm at vertical direction. The multi-channel trapezoidal
waveguide is also demonstrated. This device can transfer the light wave at the same time, and its cross talk is about -50
dB.
In this paper, the proposed polymer waveguides based on silicon optical bench (SiOB) including a Si-based 45° microreflector
and multi-channel polymer waveguides at cross-sectional dimension of 40 × 20 μm2 is demonstrated. The
proposed 45° micro-reflector is fabricated on an orientation-defined (100) silicon substrate by using the anisotropic wetetching
process. The optical performance of polymer waveguides with the propagation loss of -0.35 dB/cm and the
insertion loss of -2.5 dB for the SiOB-based bending structure with polymer waveguides has been experimented. The
multi-channels polymer waveguides based on the SiOB would be applied for the chip-to-chip optical interconnect.
In this paper, the guide-mode resonance (GMR) devices based on a suspended membrane structure is designed and
experimentally demonstrated. The presented membrane structure possesses a simple structure for resonance excitation
and is capable of improving the spectral response. The results of resonance excitation, improving the sideband and low
oscillatory spectrum are presented. Due to the utilization of silicon-based materials, the proposed filter is also potential
candidates to be integrated with other optoelectronic devices for further applications.
In this paper, silicon-based micro and subwavelength optical elements based on a free-standing silicon nitride (SiNx)
membrane are achieved. These elements, including gratings, microlenses, and holographic optical elements (HOEs), are
designed and used within the visible and infrared regions. These devices can be used as collimators, reflectors, and
wavelength-dependent filters with advantages of simple structure, high efficiency and feasibility to integrate with other
elements into a micro-system chip. In order to demonstrate the advantage of micro-optics of free-standing SiNx
membrane type in integration, a miniaturized optical pickup head module based on a stacked micro-optical system is
developed. This module consisted of a laser diode, a reflector, a grating, a holographic optical element, and some
aspherical Fresnel lenses. The novel microoptical system can overcome the problems encountered in other microoptical
systems such as off-axis aberration, lower optical efficiency or durability, integration and even in fabrication. A focal
spot with a FWHM diameter of 3.3 μm is obtained while the diffraction limited full-width at half-maximum (FWHM) is
0.7 μm. To extend the advantage of micro-optics of free-standing SiNx membrane, the subwavelength optical elements
base on guided-mode resonance is also developed. With various Si-based structures, the filter possesses numerous
properties such as variable bandwidths, low sideband, flattop, and etc. They are also applied as biosensors to detect the
hybridization process of bio reaction for their high sensitivity. The results show that micro and subwavelength optical
elements fabricated on Si-based material will be a candidate for emerging silicon micro-photonics.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.