Benefitting from the ultra-broad transparency window, high refractive index and exceptional thermal conductivity, diamond has attracted numerous spotlights on the optical applications and the academic researches. However, the practical deployments of high-quality diamond element were obstructed by the immature manufacture techniques. Here we designed a new mask system for diamond etching that utilizes SiO2 as the main hard mask layer and Cr as the adhesive layer. The cross-section morphology revels three distinct characteristics including an upper slope, a middle vertical sidewall and a trench at the bottom because of the retreat of thick SiO2 mask during the etching process. The completely different etching profile from the previous metal masks has the potential to realize higher aspect ratio etching than traditional metal masks for diamond elements.
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