We designed and fabricated a silicon nitride (Si3N4) micro ring resonator filter coupled with a straight waveguide grating coupler in the visible wavelength range. The key parameters of the micro ring resonators, including the waveguide crosssection size, bending radius, coupling spacing as well as the linewidth and period of the grating coupler, are optimized to obtain an resonant output in the range of 730~780nm. Then, Si3N4 micro-ring resonators with different parameters are patterned by electron beam lithography (EBL), inductively coupled plasma etching (ICP) and other processes. At last, the filtered light peaks and the free spectral range of the micro ring resonator are characterized, which are found to be tunable by varying the cross section of the waveguide and the radius of the ring. In addition, by replacing SiO2 with Polyvinyl alcohol (PVA) resin as the upper cladding of the device, the flatness of the top surface of the device can be further improved with a simplified process. Our study lays a foundation for the heterogeneous integration of different materials with COMS compatible silicon nitride platform.
The rapid development in the field of optoelectronic integration requires highly efficient coupling between optical fibers and on-chip waveguides. Here, we report an efficient vertical grating coupler which is compatible with COMS process and suitable for silicon nitride photonic integration. The optimized design, fabrication and optical characterizations are presented in details for a silicon nitride waveguide grating coupler. The preliminary results show that the output power of the optimal device structure is 0.25dBm, in good agreement with the simulation result. The fully etched waveguide design needs only one-step etching, which greatly simplifies the fabrication process. Meanwhile, spin coating of Ma2400 series photoresist is innovatively used instead of evaporating SiO2 as the cladding layer of the device, which offers an efficient and economic way to obtain a flat top surface for integration of other devices. Our study provides an alternative method for the heterogeneous integration of functional devices on the COMS compatible silicon nitride platform.
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