We investigated the dynamics of LSFL (Low Spatial Frequency LIPSS) evolution on the titanium alloy surface. To create them, 12 W picosecond 1.064 μm laser with a pulse repetition rate from 50 kHz to 500 kHz was used. For different laser repetition rate (500, 150, 100 and 50 kHz), the ranges of LSFL periods and peak Fluence of pulse (Fp) for which the maximum period is reached were determined. We also determined the laser parameters at which the resulting LSFL have good quality and uniformity, regardless of the initial surface roughness.
In this work, the influence of initial surface roughness on laser-induced periodic surface structures (LIPSS) formation is explored for titanium and stainless steel samples polished with grain sizes of 18.3μm, 8.4μm, 5μm, and 0.5μm, and lasered maintaining the same irradiation conditions. The resulting structures were studied by scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy, and contact angle (CA) measurements, in order to characterize LIPSS periodicity and orientation, as well as surface chemistry and wettability. After characterization, representative structures were chosen to further explore their potential for bone implant treatment by inducing cells (MG63) and bacteria (E.coli and S.aureus) and testing for viability by resazurin assays, alkaline phosphatase activity, and SEM imaging. Results show that initial surface roughness (Ra) plays a different role on LIPSS generation for both materials, with stainless steel showing a higher dependence on Ra than titanium, however, both materials show a reduction on bacterial viability, while cell proliferation between polished and lasered samples also show an enhanced osteogenic effect.
GaN/InGaN multiple quantum wells (MQW) is a promising material for high-efficiency solid-state lighting. Ultrafast optical pump-probe spectroscopy is an important characterization technique for examining fundamental phenomena in semiconductor nanostructure with sub-picosecond resolution. In this study, ultrafast exciton and charge carrier dynamics in GaN/InGaN MQW planar layer and nanorod are investigated using femtosecond transient absorption (TA) techniques at room temperature. Here nanorods are fabricated by etching the GaN/InGaN MQW planar layers using nanosphere lithography and reactive ion etching. Photoluminescence efficiency of the nanorods have been proved to be much higher than that of the planar layers, but the mechanism of the nanorod structure improvement of PL efficiency is not adequately studied. By comparing the TA profile of the GaN/InGaN MQW planar layers and nanorods, the impact of surface states and nanorods lateral confinement in the ultrafast carrier dynamics of GaN/InGaN MQW is revealed. The nanorod sidewall surface states have a strong influence on the InGaN quantum well carrier dynamics. The ultrafast relaxation processes studied in this GaN/InGaN MQW nanostructure is essential for further optimization of device application.
GaN/InGaN multiple quantum wells (MQW) and GaN nanorods have been widely studied as a candidate material for high-performance light emitting diodes. In this study, GaN/InGaN MQW on top of GaN nanorods are characterized in nanoscale using confocal microscopy associated with photoluminescence spectroscopy, including steady-state PL, timeresolved PL and fluorescence lifetime imaging (FLIM). Nanorods are fabricated by etching planar GaN/InGaN MQWs on top of a GaN layer on a c-plane sapphire substrate. Photoluminescence efficiency from the GaN/InGaN nanorods is evidently higher than that of the planar structure, indicating the emission improvement. Time-resolved photoluminescence (TRPL) prove that surface defects on GaN nanorod sidewalls have a strong influence on the luminescence property of the GaN/InGaN MWQs. Such surface defects can be eliminated by proper surface passivation. Moreover, densely packed nanorod array and sparsely standing nanorods have been studied for better understanding the individual property and collective effects from adjacent nanorods. The combination of the optical characterization techniques guides optoelectronic materials and device fabrication.
We report the fabrication of densely packed InGaN/GaN nanorods with high hexagonal periodicity. Nanosphere lithography and reactive ion etching were adopted to fabricate the nanorods from planar multiple quantum wells (MQWs). Compared to the planar MQWs, the nanorods exhibit significant luminescence enhancement. This is mostly attributed to the increased radiative recombination and light extraction efficiency. Both photoluminescence and Raman measurements confirmed in-plane strain relaxation in the MQWs after nanofabrication. A reduction in strain-induced quantum confined Stark effect in the nanorods increased radiative recombination. This work is most crucial to the understanding of optical properties with respect to the carrier transport and recombination in InGaN/GaN nanorods.
We use the nonlinear optical property of GaAs to directly visualize the path of the near infrared incident laser light
coupled into individual nanowires. We fully illuminate with near infrared pulse laser untapered and tapered GaAs
nanowires grown via the Au-assisted vapor-liquid-solid mechanism. We record second-harmonic generation (SHG)
signals in the visible spectrum. In some nanowires, an interference pattern is observed and investigated in terms of
distances between the maxima of the SHG signal taking into account the effective refractive index in such sub
wavelength structures with radius below 90 nm. We propose a model to explain the periodicity of the maxima in the
SHG interference pattern. The theoretical model includes the waveguiding and the Mie scattering theories for obtaining
the 2π periodicity fitting well the experiments. Moreover, we also measure interferences in tapererd nanowires with a
radius down to 76 nm. The possible effect of the gold in non radiative recombination and the presence of the gold
particle at the tip of some nanowires are also discussed.
Charge carrier distribution changes in solid substrates induced by the presence of biomolecules have the potential as
sensoric principle. For a high surface-to-bulk ratio as in the case of nanostructures, this effect can be used for highly
sensitive bioanalytics.
Plasmonic nanosensors represent one possible implementation: The resonance wavelength of the conductive electron
oscillation under light irradiation is changed upon molecular binding at the structure surface. This change can be detected
by spectroscopic means, even on a single nanoparticle level using microspectroscopy.
Other examples are nanowires in electrodes gaps, either by metal nanoparticles arranged in a chain-like geometry or by
rod-like semiconductor nanowires directly bridging the gap. Molecules binding at the surface will lead to changes in the
electrical conductivity which can be easily converted into an electrical readout. The various geometries will be discussed
and their sensoric potential for an electrical detection demonstrated.
Nanoscale sensors have the potential for ultrasensitive and highly parallel bioanalytical applications. Bottom up methods
like gas-phase self assembly allow for the controlled and cost-efficient preparation of numerous functional units with
nanometer dimensions. Their use in sensoric instruments, however, requires the defined integration into sensoric setups
such as electrode arrays.
We show here how to use alternating electrical fields (dielectrophoresis DEP) in order to address this micro nano
integration problem. Nanoscale units such as metal nanoparticles or semiconductor nanowires are thereby polarized and
moved into the direction of higher electrical field gradients. As result, these particles bridge an electrode gap and can so
be used for electrical sensoric using the electrical resistance through this structure as value correlated to the presence of
molecules at the sensor surface. In order to achieve high selectivity, capture molecules (such as complementary DNA or
antibodies) are used.
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