Graphene is a two-dimensional carbon material which has been extensively studied for its applications in electronic devices due to its fast carrier kinetics. However, the weak photon absorption of graphene limits its application in photodetectors. Transition metal chalcogenides (TMDCs) quantum dots (QDs) have been used to modify the graphene properties since these QDs have abundant active edge sites and specific optoelectronic properties. In this study, we synthesized SnSe2 QDs by the process of sonication and laser ablation. The average size of SnSe2 QDs was characterized by the transmission electron microscopy (TEM). We demonstrated a sensitive ultraviolet (UV) photodetector based on graphene and SnSe2 QDs on a polyethylene terephthalate (PET) substrate. The responsibility of the device was up to 1830 AW-1 when the irradiation density was 155.2 μW/cm2 . The rising time τ𝒓 was 0.26 s. The device showed good stability even after bending 100 times. SnSe2 QDs enhanced the light absorption and the creation of photocarriers which could extend the applications of graphene in flexible optoelectronic devices.
Tin disulfide (SnS2) quantum dots (QDs) have been used in the fields of sensors. However, the reported SnS2 QDs were fabricated by the wet chemical method which was complicated. In this paper, we synthesized SnS2 QDs by a facile ultrasonic probe sonication process. The average size of SnS2 QDs was 3 nm which was observed in the transmission electron microscope (TEM) images. Two vibrational modes of SnS2 QDs were observed at 203 cm-1 (Eg) and 310 cm-1 (A1g) in the Raman spectrum. There was an absorption peak at 320 nm in the UV-Vis spectrum. Excitation wavelength dependent photoluminescence (PL) was measured. The maximum PL intensity of SnS2 QDs was observed at 450 nm under the excitation wavelength of 370 nm. This indicates that the SnS2 QDs have potential applications in optical devices.
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