Study Of The Effects Of Strain In Indium-Doped Gallium Arsenide By Electroreflectance And Photocapacitance

Paul M. Raccah; J. W. Garland; Z. Zhang; S. Mioc; Yang De; Amy H. M. Chu; S, McGuigan; R. N. Thomas

doi:10.1117/12.961192

26 June 1986 Study Of The Effects Of Strain In Indium-Doped Gallium Arsenide By Electroreflectance And Photocapacitance

Paul M. Raccah, J. W. Garland, Z. Zhang, S. Mioc, Yang De, Amy H. M. Chu, S, McGuigan, R. N. Thomas

Proceedings Volume 0623, Advanced Processing and Characterization of Semiconductors III; (1986) https://doi.org/10.1117/12.961192
Event: O-E/LASE'86 Symposium, 1986, Los Angeles, CA, United States

Abstract

Electrolyte electroreflectance and photocapacitance measurements have been performed on In-doped and on undoped GaAs. They verify that In doping generates large inhomogeneous strains which locally lower the stability of the zincblende structure compared to the chalcopyrite structure, but that it lowers the density of dislocations and of antisites. They also show that the EL2 complex is intimately associated with As antisites.

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Paul M. Raccah, J. W. Garland, Z. Zhang, S. Mioc, Yang De, Amy H. M. Chu, S, McGuigan, and R. N. Thomas "Study Of The Effects Of Strain In Indium-Doped Gallium Arsenide By Electroreflectance And Photocapacitance", Proc. SPIE 0623, Advanced Processing and Characterization of Semiconductors III, (26 June 1986); https://doi.org/10.1117/12.961192

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