Patterning with metal-oxide EUV photoresist: patterning capability, resist smoothing, trimming, and selective stripping

Ming Mao; Frederic Lazzarino; Peter De Schepper; Danilo De Simone; Daniele Piumi; Vinh Luong; Fumiko Yamashita; Michael Kocsis; Kaushik Kumar

doi:10.1117/12.2258118

27 March 2017 Patterning with metal-oxide EUV photoresist: patterning capability, resist smoothing, trimming, and selective stripping

Ming Mao, Frederic Lazzarino, Peter De Schepper, Danilo De Simone, Daniele Piumi, Vinh Luong, Fumiko Yamashita, Michael Kocsis, Kaushik Kumar

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Proceedings Volume 10146, Advances in Patterning Materials and Processes XXXIV; 101460I (2017) https://doi.org/10.1117/12.2258118
Event: SPIE Advanced Lithography, 2017, San Jose, California, United States

Abstract

Inpria metal-oxide photoresist (PR) serves as a thin spin-on patternable hard mask for EUV lithography. Compared to traditional organic photoresists, the ultrathin metal-oxide photoresist (~12nm after development) effectively mitigates pattern collapse. Because of the high etch resistance of the metal-oxide resist, this may open up significant scope for more aggressive etches, new chemistries, and novel integration schemes. We have previously shown that metal-oxide PR can be successfully used to pattern the block layer for the imec 7-nm technology node^[1] and advantageously replace a multiple patterning approach, which significantly reduces the process complexity and effectively decreases the cost. We also demonstrated the formation of 16nm half pitch 1:1 line/space with EUV single print^[2], which corresponds to a metal 2 layer for the imec 7-nm technology node. In this paper, we investigate the feasibility of using Inpria’s metal-oxide PR for 16nm line/space patterning. In meanwhile, we also explore the different etch process for LWR smoothing, resist trimming and resist stripping.

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Ming Mao, Frederic Lazzarino, Peter De Schepper, Danilo De Simone, Daniele Piumi, Vinh Luong, Fumiko Yamashita, Michael Kocsis, and Kaushik Kumar "Patterning with metal-oxide EUV photoresist: patterning capability, resist smoothing, trimming, and selective stripping", Proc. SPIE 10146, Advances in Patterning Materials and Processes XXXIV, 101460I (27 March 2017); https://doi.org/10.1117/12.2258118

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