Tapered waveguide high power AlGaInN laser diodes and amplifiers for optical integration and quantum technologies

S. P. Najda; S. Stanczyk; A. Kafar; P. Perlin; T. Suski; L. Marona; S. Grzanka; K. Gibasiewicz; P. Wisniewski; R. Czernecki; D. Schiavon; M. Leszczyński

doi:10.1117/12.2279565

5 October 2017 Tapered waveguide high power AlGaInN laser diodes and amplifiers for optical integration and quantum technologies

S. P. Najda, S. Stanczyk, A. Kafar, P. Perlin, T. Suski, L. Marona, S. Grzanka, K. Gibasiewicz, P. Wisniewski, R. Czernecki, D. Schiavon, M. Leszczyński

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Proceedings Volume 10442, Quantum Information Science and Technology III; 104420O (2017) https://doi.org/10.1117/12.2279565
Event: SPIE Security + Defence, 2017, Warsaw, Poland

Abstract

The AlGaInN material system allows for laser diodes to be fabricated over a very wide range of wavelengths from UV, ~380 nm, to the visible ~530 nm, by tuning the indium content of the laser GaInN quantum well. This makes nitride laser diodes suitable for a vast range of applications, but most of them require not only the proper wavelength emission, but also high optical power and good beam quality. The typical approach - wide ridge waveguide - often suffers from spatial multimode emission (low beam quality). We report our initial results with tapered GaN lasers to increase the maximum optical power of the device with a good beam profile. This combination opens new possibilities for GaN laser diode technology in quantum technologies including optical atomic clocks and quantum gravity sensors.

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S. P. Najda, S. Stanczyk, A. Kafar, P. Perlin, T. Suski, L. Marona, S. Grzanka, K. Gibasiewicz, P. Wisniewski, R. Czernecki, D. Schiavon, and M. Leszczyński "Tapered waveguide high power AlGaInN laser diodes and amplifiers for optical integration and quantum technologies", Proc. SPIE 10442, Quantum Information Science and Technology III, 104420O (5 October 2017); https://doi.org/10.1117/12.2279565

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