Obert Wood II,1 Yulu Chen,2 Pawitter Mangat,2 Kenneth Goldberghttps://orcid.org/0000-0001-9984-5780,3 Markus Benk,3 Bryan Kasprowicz,4 Henry Kamberian,4 Jeremy McCord,4 Thomas Wallow5
1GLOBALFOUNDRIES Inc. (United States) 2GLOBALFOUNDRIES (United States) 3Ctr. for X-Ray Optics (United States) 4Photronics, Inc. (United States) 5ASML Brion Technologies (United States)
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This paper provides experimental measurements of through-focus pattern shifts between contact holes in a dense array and a surrounding pattern of lines and spaces using the SHARP actinic microscope in Berkeley. Experimental values for pattern shift in EUV lithography due to 3D mask effects are extracted from SHARP microscope images and benchmarked with pattern shift values determined by rigorous simulations.
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Obert Wood II, Yulu Chen, Pawitter Mangat, Kenneth Goldberg, Markus Benk, Bryan Kasprowicz, Henry Kamberian, Jeremy McCord, Thomas Wallow, "Measurement of through-focus EUV pattern shifts using the SHARP actinic microscope," Proc. SPIE 10450, International Conference on Extreme Ultraviolet Lithography 2017, 1045008 (16 October 2017); https://doi.org/10.1117/12.2280371