Paper
1 October 2018 Temperature transducer based on metal-pyroelectric-semiconductor structure with negative differential resistance
Alexander V. Osadchuk, Vladimir S. Osadchuk, Serhii V. Baraban, Tomasz Zyska, Aizhan Zhanpeisova
Author Affiliations +
Proceedings Volume 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018; 108085D (2018) https://doi.org/10.1117/12.2501625
Event: Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 2018, Wilga, Poland
Abstract
The paper analyses modern development status of temperature transducer on the basis of piroelectrics, represents and describes a new temperature transducer on the basis of transistor structure with negative differential resistance, simulates current-voltage and frequency characteristic of this device in the software environment Pspice.
© (2018) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander V. Osadchuk, Vladimir S. Osadchuk, Serhii V. Baraban, Tomasz Zyska, and Aizhan Zhanpeisova "Temperature transducer based on metal-pyroelectric-semiconductor structure with negative differential resistance", Proc. SPIE 10808, Photonics Applications in Astronomy, Communications, Industry, and High-Energy Physics Experiments 2018, 108085D (1 October 2018); https://doi.org/10.1117/12.2501625
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KEYWORDS
Transducers

Resistance

Transistors

Temperature metrology

Capacitance

Semiconductors

Field effect transistors

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