Fast and ultrasensitive nanomechanical displacement detection based on the single electron transisitor

Miles P. Blencowe

doi:10.1117/12.496961

8 May 2003 Fast and ultrasensitive nanomechanical displacement detection based on the single electron transistor

Miles P. Blencowe

Proceedings Volume 5115, Noise and Information in Nanoelectronics, Sensors, and Standards; (2003) https://doi.org/10.1117/12.496961
Event: SPIE's First International Symposium on Fluctuations and Noise, 2003, Santa Fe, New Mexico, United States

Abstract

We review recent experimental and theoretical work towards the realization of a fast and ultrasensitive, nanomechanical displacement detector based on the radio frequency single electron transistor (rf-SET).

Citation Download Citation

Miles P. Blencowe "Fast and ultrasensitive nanomechanical displacement detection based on the single electron transistor", Proc. SPIE 5115, Noise and Information in Nanoelectronics, Sensors, and Standards, (8 May 2003); https://doi.org/10.1117/12.496961

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