Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate

Jarosław Wróbel; Kacper Grodecki; Djalal Benyahia; Krzysztof Murawski; Krystian Michalczewski; Justyna Grzonka; Jacek Boguski; Kinga Gorczyca; Gilberto A. Umana-Membreno; Łukasz Kubiszyn; Artur Kębłowski; Paweł Piotr Michałowski; Emilia Gomółka; Piotr Martyniuk; Józef Piotrowski; Antoni Rogalski

doi:10.1117/12.2503624

14 August 2018 Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate

Jarosław Wróbel, Kacper Grodecki, Djalal Benyahia, Krzysztof Murawski, Krystian Michalczewski, Justyna Grzonka, Jacek Boguski, Kinga Gorczyca, Gilberto A. Umana-Membreno, Łukasz Kubiszyn, Artur Kębłowski, Paweł Piotr Michałowski, Emilia Gomółka, Piotr Martyniuk, Józef Piotrowski, Antoni Rogalski

Author Affiliations +

Proceedings Volume 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods; 108300S (2018) https://doi.org/10.1117/12.2503624
Event: Thirteenth Integrated Optics: Sensors, Sensing Structures and Methods Conference, 2018, Szcyrk, Poland

Abstract

The highly Be-doped InAs layer has been grown on semi-insulating GaAs (100) substrate by Molecular Beam Epitaxy. Very good quality of the layer has been attested by high resolution scanning electron microscope (HR-SEM), X-ray diffraction (XRD) and the Raman spectra. The parallel and perpendicular residual strain are determined to be – 1.17 × 10^-3 , and 1.12 × 10^-3 , respectively. Moreover, the absorbance (ABS) and photoluminescence (PL) spectra were collected in order to estimate the bandgap narrowing. The 10 meV bandgap shrinking for 1.7×10¹⁸ cm^-3 acceptor concentration suggests necessity of reexamining the Jain et al model [Jain, S. C., et al. - JAP 68(7): 3747-3749] in the context of actual values of InAs valence-bands effective-masses.

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Jarosław Wróbel, Kacper Grodecki, Djalal Benyahia, Krzysztof Murawski, Krystian Michalczewski, Justyna Grzonka, Jacek Boguski, Kinga Gorczyca, Gilberto A. Umana-Membreno, Łukasz Kubiszyn, Artur Kębłowski, Paweł Piotr Michałowski, Emilia Gomółka, Piotr Martyniuk, Józef Piotrowski, and Antoni Rogalski "Structural and optical characterization of the high quality Be-doped InAs epitaxial layer grown on GaAs substrate", Proc. SPIE 10830, 13th Conference on Integrated Optics: Sensors, Sensing Structures, and Methods, 108300S (14 August 2018); https://doi.org/10.1117/12.2503624

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