Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning

Pieter Vanelderen; Victor Blanco; Ming Mao; Yoann Tomczak; David de Roest; Nicola Kissoon; Paulina Rincon Delgadillo; Gijsbert Rispens; Guido Schiffelers; Abhinav Pathak; Frederic Lazzarino; Danilo De Simone; Etienne de Poortere; Moyra Mc Manus; Daniele Piumi; Eric Hendrickx; Geert Vandenberghe

doi:10.1117/12.2515503

26 March 2019 Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning

Pieter Vanelderen, Victor Blanco, Ming Mao, Yoann Tomczak, David de Roest, Nicola Kissoon, Paulina Rincon Delgadillo, Gijsbert Rispens, Guido Schiffelers, Abhinav Pathak, Frederic Lazzarino, Danilo De Simone, Etienne de Poortere, Moyra Mc Manus, Daniele Piumi, Eric Hendrickx, Geert Vandenberghe

Author Affiliations +

Proceedings Volume 10957, Extreme Ultraviolet (EUV) Lithography X; 109570S (2019) https://doi.org/10.1117/12.2515503
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

Enhanced EUV lithography (EUVL) resist performance, combined with optimized post processing techniques, are vital to ensure continued scaling and meet the requirements for the industry N5 node and beyond. Sequential infiltration synthesis (SIS) is a post lithography technique that has the potential to significantly improve the EUVL patterning process for stochastic nano-failures and line roughness, both major topics in EUV lithography research. SIS is an ALD-like technique that infiltrates polymeric photoresists, forming a metal framework using the lithography pattern as a template. Hardening of the photoresist improves the pattern quality and gives more flexibility to subsequent pattern transfer steps. We have evaluated the performance of SIS for an EUV Chemically Amplified Resist (CAR) platform printing 32 nm pitch line/space patterns and ultimately structures that are representative of standard semiconductor manufacturing. A combined lithography-SIS-etch process and a standard lithography-etch process were optimized for an industry relevant stack with pattern transfer into a TiN layer. This allows for the first time a justified comparison between a EUVL-SIS and a standard EUVL patterning process, showing the benefits of SIS regarding roughness, exposure latitude and nano-failure mitigation. Power Spectral Density (PSD) analysis accurately demonstrates and explains the type of roughness improvement. Nano-failure analysis is done by measuring large areas at different exposure doses and shows the improvement of the nano-failure free window when applying a EUVL-SIS patterning process. We conclude by examining to which extent combining the best lithography process with an optimized SIS step will lead to a better roughness and nano-failure performance, essential to meeting industry requirements.

Conference Presentation

Citation Download Citation

Pieter Vanelderen, Victor Blanco, Ming Mao, Yoann Tomczak, David de Roest, Nicola Kissoon, Paulina Rincon Delgadillo, Gijsbert Rispens, Guido Schiffelers, Abhinav Pathak, Frederic Lazzarino, Danilo De Simone, Etienne de Poortere, Moyra Mc Manus, Daniele Piumi, Eric Hendrickx, and Geert Vandenberghe "Impact of sequential infiltration synthesis (SIS) on roughness and stochastic nano-failures for EUVL patterning", Proc. SPIE 10957, Extreme Ultraviolet (EUV) Lithography X, 109570S (26 March 2019); https://doi.org/10.1117/12.2515503

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available