Analyze line roughness sources using power spectral density (PSD)

Lingling Pu; Teng Wang; Thomas J. Huisman; Ruben Maas; Maikel Goosen; Harm Dillen; Philippe Leray; Wei Fang

doi:10.1117/12.2516570

26 March 2019 Analyze line roughness sources using power spectral density (PSD)

Lingling Pu, Teng Wang, Thomas J. Huisman, Ruben Maas, Maikel Goosen, Harm Dillen, Philippe Leray, Wei Fang

Proceedings Volume 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII; 109592W (2019) https://doi.org/10.1117/12.2516570
Event: SPIE Advanced Lithography, 2019, San Jose, California, United States

Abstract

As device size continues to shrink, stochastic-induced roughness of resist features exposed by photolithography is of increasing concern to the semiconductor industry. In this paper, we propose an end-to-end approach for line roughness analysis by using the Line Roughness Module from our CDU solution family, which is a part of HMI’s metrology SEM tool the eP5. Simulated Scanning Electron Microscope (SEM) images of line/space patterns are used to verify the ability of the Module to reliably extract roughness related metrics. A set of imec EUV ADI images collected on our metrology SEM tool are analyzed by the Line Roughness Module, and wafer signature maps of various roughness metrics are obtained. These wafer maps not only help to analyze different roughness contribution sources, but also provide insights about feature roughness in a systematic way. Such information can be further used in a feedback loop to the scanner for model correction and process control.

Citation Download Citation

Lingling Pu, Teng Wang, Thomas J. Huisman, Ruben Maas, Maikel Goosen, Harm Dillen, Philippe Leray, and Wei Fang "Analyze line roughness sources using power spectral density (PSD)", Proc. SPIE 10959, Metrology, Inspection, and Process Control for Microlithography XXXIII, 109592W (26 March 2019); https://doi.org/10.1117/12.2516570

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