Paper
11 October 1989 The Influence Of Dislocation Scattering On N-Type Hg1-xCdxTe Mobility
Xu Xiaomin, Hu Xierong, Shen Jie
Author Affiliations +
Abstract
The electronic mobility is an important parameter to express HgCdTe characters. The performance of photoconductive detectors, photovoltaic detectors and sprite detectors are all concerned with it. In our work, besides ionized impurity scattering, polar-optical scattering, acoustic deformation potential scattering and piezoelectric scattering, we also consider the dislocation scattering and give the result in accord with experiment. It shows that dislocation scattering is one of the important factors to influence HgCdTe electronic mobility. In our work, we also give a kind of amendment formula of ionized density. In addition, we also discuss the relationships between mobility and temperature and dislocation density. The result shows that, in the region 40K and 100K, the influence of dislocation is important and can not be neglected.
© (1989) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Xu Xiaomin, Hu Xierong, and Shen Jie "The Influence Of Dislocation Scattering On N-Type Hg1-xCdxTe Mobility", Proc. SPIE 1107, Infrared Detectors, Focal Plane Arrays, and Imaging Sensors, (11 October 1989); https://doi.org/10.1117/12.960669
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KEYWORDS
Scattering

Solids

Acoustics

Infrared detectors

Mercury cadmium telluride

Optical sensors

Staring arrays

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