The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots

Anubhav Agarwal; Abhijeet Aanand; Sanowar A. Gazi; Suryansh Dongre; Sritoma Paul; Shubham Mondal; Rishabh A. Dahale; Debabrata Das; Debiprasad Panda; Subhananda Chakrabarti

doi:10.1117/12.2528996

9 September 2019 The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots

Anubhav Agarwal, Abhijeet Aanand, Sanowar A. Gazi, Suryansh Dongre, Sritoma Paul, Shubham Mondal, Rishabh A. Dahale, Debabrata Das, Debiprasad Panda, Subhananda Chakrabarti

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Proceedings Volume 11085, Low-Dimensional Materials and Devices 2019; 1108518 (2019) https://doi.org/10.1117/12.2528996
Event: SPIE Nanoscience + Engineering, 2019, San Diego, California, United States

Abstract

InAs/GaAs Quantum Dots have piqued the interest of researchers owing to the advantages they offer in the fabrication of highly efficient optoelectronic devices. In this study, we aim to examine the consequence varying V-III ratio on optical and structural behavior of self-assembled InAs/GaAs Stranski-Krastanov (SK) Quantum Dots grown on GaAs substrate using Molecular Beam Epitaxy (MBE). Three samples consisting of three layers of vertically stacked Quantum Dots with three different V-III ratios (48, 60 and 80 respectively) grown at a substrate temperature of 490°C have been thoroughly examined using PL spectroscopy and HR-XRD. The best optical response is seen in the sample with 80 as VIII ratio. A higher As vapor pressure during growth seems to suppress the surface migration of Indium atoms leading to bigger dot size, increased PL intensity and more uniform distribution rendering better optical response. The absence of satellite peaks in HR-XRD measurements of sample with lower V-III ratio indicates significant density of point-defects. HRXRD analysis reveals an increase in perpendicular strain with greater V-III ratio. Reduced FWHM in sample with higher V-III ratio is in accordance with suppressed Indium diffusion and strain propagation across multi-layered nanostructure contributing to greater uniformity in dot-size. PL spectrum of sample with least V-III ratio shows sharp peaks around 900 nm indicating incomplete dot-formation at such low ratios leaving significant part of wetting layer exposed. Our investigation provides interesting insights into kinetics of nanostructure growth which will prove to be helpful in fabrication of optimized nanostructures.

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Anubhav Agarwal, Abhijeet Aanand, Sanowar A. Gazi, Suryansh Dongre, Sritoma Paul, Shubham Mondal, Rishabh A. Dahale, Debabrata Das, Debiprasad Panda, and Subhananda Chakrabarti "The effects of V-III ratio on structural and optical properties of self-assembled InAs quantum dots", Proc. SPIE 11085, Low-Dimensional Materials and Devices 2019, 1108518 (9 September 2019); https://doi.org/10.1117/12.2528996

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KEYWORDS

Quantum dots

Luminescence

Gallium arsenide

Indium

Arsenic

Indium arsenide

Nanostructures

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