Paper
15 December 2000 Single-dot spectroscopy of multiexcitons in AlInAs/AlGaAs quantum dots
Karin Hinzer, M. Bayer, O. Stern, A. Gorbunov, Alfred W. B. Forchel, Pawel Hawrylak, Jean Lapointe, Simon Fafard
Author Affiliations +
Proceedings Volume 4087, Applications of Photonic Technology 4; (2000) https://doi.org/10.1117/12.406453
Event: 2000 International Conference on Application of Photonic Technology (ICAPT 2000), 2000, Quebec City, Canada
Abstract
Self-assembled AI36Ino.As/AIo33Gao.67As quantum dots have been studied by single dot photoluminescence spectroscopy at T= 1.5 K. Emission from the biexciton state is observed, for which we find a binding energy of 5 meV, also, larger multi-exciton complexes are observed at higher excitation intensities. These artificial atoms are found to have an intersublevel spacing of7O meV. In magnetic field, we observe Zeeman splitting ofthe exciton and biexciton spectral lines.
© (2000) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Karin Hinzer, M. Bayer, O. Stern, A. Gorbunov, Alfred W. B. Forchel, Pawel Hawrylak, Jean Lapointe, and Simon Fafard "Single-dot spectroscopy of multiexcitons in AlInAs/AlGaAs quantum dots", Proc. SPIE 4087, Applications of Photonic Technology 4, (15 December 2000); https://doi.org/10.1117/12.406453
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KEYWORDS
Excitons

Magnetism

Luminescence

Spectroscopy

Quantum dots

Chemical species

Gallium arsenide

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