Enhanced aluminum doping profile in 4H-SiC by wet-chemical laser doping

Atif Mehmood Jadoon; Lingfei Ji; Zhenyuan Lin

doi:10.1117/12.2537604

17 May 2019 Enhanced aluminum doping profile in 4H-SiC by wet-chemical laser doping

Atif Mehmood Jadoon, Lingfei Ji, Zhenyuan Lin

Proceedings Volume 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019); 111703M (2019) https://doi.org/10.1117/12.2537604
Event: Fourteenth National Conference on Laser Technology and Optoelectronics, 2019, Shanghai, China

Abstract

In this paper, enhancement of Aluminum doping profile in semi-insulating 4H-SiC by using Eximer laser in AlCl3 aqueous solution is focused. Several active parameters like number of shots, laser power and dopants solution density affect the doping mechanism. Laser doping with increase of AlCl3 solution concentration from 28 to 36 wt.% results in more efficient doping with merging features like better ohmic contact formation having ideal symmetry factor. Hall Effect measurement using Van der Pauw method show that laser produces a highly doped p-type layer with increasing carrier concentration from 1012/cm2 to a maximum 1015/cm2 by tuning parameter . Current-Voltage characteristics of modified region show the ohmic behavior with reduction in resistance. UV spectrometer absorption tangent line shifts from 375 nm to 401 nm indicating that Al impurity has been introduced in 4H-SiC.

Citation Download Citation

Atif Mehmood Jadoon, Lingfei Ji, and Zhenyuan Lin "Enhanced aluminum doping profile in 4H-SiC by wet-chemical laser doping", Proc. SPIE 11170, 14th National Conference on Laser Technology and Optoelectronics (LTO 2019), 111703M (17 May 2019); https://doi.org/10.1117/12.2537604

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