GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC

Gary E. Bulman; Hua-Shuang Kong; Michelle T. Leonard

doi:10.1117/12.382127

13 April 2000 GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC

Gary E. Bulman, Hua-Shuang Kong, Michelle T. Leonard

Proceedings Volume 3948, Photodetectors: Materials and Devices V; (2000) https://doi.org/10.1117/12.382127
Event: Symposium on Integrated Optoelectronics, 2000, San Jose, CA, United States

Abstract

GaN homojunction and AlGaN/GaN heterojunction UV photodiodes were successfully fabricated and tested. The p⁺/n mesa devices were grown on a n-type 6H-SiC substrate. Photoresponse was observed in these deices from 206 nm to the cutoff wavelength of GaN. Peak responsivity values of 111 mA/W and 123 mA/W were observed at 360 nm for unpackaged homojunction and heterojunction devices, respectively. In packaged device, the peak responsivity increased to 124 and 147 mA/W for the homojunction and heterojunction devices, respectively. High breakdown voltages in excess of 100 V for the homojunction and 70 V for the heterojunction devices were obtained with dark current densities of 3 by 10^-11 A/cm² and 1 by 10^-10 A/cm² A/cm² at -1V bias at room temperature, respectively. These result show that homojunction and heterojunction visible-blind detectors can be fabricated in the AlGaN/GaN material system on SiC substrates.

Citation Download Citation

Gary E. Bulman, Hua-Shuang Kong, and Michelle T. Leonard "GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC", Proc. SPIE 3948, Photodetectors: Materials and Devices V, (13 April 2000); https://doi.org/10.1117/12.382127

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