Dual platform stepper/scanner-based overlay evaluation method

P. Kulse; S. Jätzlau; K. Schulz; M. Wietstruck

doi:10.1117/12.2535629

29 August 2019 Dual platform stepper/scanner-based overlay evaluation method

P. Kulse, S. Jätzlau, K. Schulz, M. Wietstruck

Author Affiliations +

Proceedings Volume 11177, 35th European Mask and Lithography Conference (EMLC 2019); 111770F (2019) https://doi.org/10.1117/12.2535629
Event: 35th European Mask and Lithography Conference, 2019, Dresden, Germany

Abstract

In this work we address the capability of an alternative overlay evaluation method for the entire BEOL-Process of IHP’s standard 0.25 and 0.13 μm SiGe:C BiCMOS technology. A dual lithography platform NIKON® NSR 210D/207D scanners and NIKON® NSR SF-150 i-Line stepper layer crossing and wafer bow related overlay issues will be discussed. Stack alignment marks, which serves the exposure alignment and overlay determination were introduced. A mismatch for overlay (x/y) |mean| + 3σ values below 8 nm between the KLA® ARCHER 100 overlay and both lithography tools could be demonstrated.

Citation Download Citation

P. Kulse, S. Jätzlau, K. Schulz, and M. Wietstruck "Dual platform stepper/scanner-based overlay evaluation method", Proc. SPIE 11177, 35th European Mask and Lithography Conference (EMLC 2019), 111770F (29 August 2019); https://doi.org/10.1117/12.2535629

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