Study On The 1720cm-1 Absorption Band Of Cz-Si By Low-Temperature FT-IR Measurement

N. Nagai; Y. Nagasawa; H. Ishida; A. Ishitani

doi:10.1117/12.969487

1 December 1989 Study On The 1720cm-1 Absorption Band Of Cz-Si By Low-Temperature FT-IR Measurement

N. Nagai, Y. Nagasawa, H. Ishida, A. Ishitani

Proceedings Volume 1145, 7th Intl Conf on Fourier Transform Spectroscopy; (1989) https://doi.org/10.1117/12.969487
Event: Seventh International Conference on Fourier and Computerized Infrared Spectroscopy, 1989, Fairfax, VA, United States

Abstract

Temperature dependence of the so called 1720cm-1 band of Cz-Si has been studied. It has been shown, that temperature dependence of peak shift and height of the 1720cm-I band is similar to those of well known 9μm band. Temperature dependence of the half band width is almost the same as that of 9μm band above 100K. The present results indicate that the 1720cm-I band is a combination band of the 9μm band and a localized vibrational mode.

Citation Download Citation

N. Nagai, Y. Nagasawa, H. Ishida, and A. Ishitani "Study On The 1720cm-1 Absorption Band Of Cz-Si By Low-Temperature FT-IR Measurement", Proc. SPIE 1145, 7th Intl Conf on Fourier Transform Spectroscopy, (1 December 1989); https://doi.org/10.1117/12.969487

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