High contact angle embedded barrier layer materials for next-generation 193 immersion lithography

Joshua Kaitz; Mingqi Li; Ryan Lee; Amy Kwok; Thomas Cardolaccia; Amiel Evans; Choong-Bong Lee; Xisen Hou; Ke Yang

doi:10.1117/12.2583735

22 February 2021 High contact angle embedded barrier layer materials for next-generation 193 immersion lithography

Joshua Kaitz, Mingqi Li, Ryan Lee, Amy Kwok, Thomas Cardolaccia, Amiel Evans, Choong-Bong Lee, Xisen Hou, Ke Yang

Proceedings Volume 11612, Advances in Patterning Materials and Processes XXXVIII; 116120U (2021) https://doi.org/10.1117/12.2583735
Event: SPIE Advanced Lithography, 2021, Online Only

Conference Poster

Abstract

To maximize value in integrated circuit manufacturing, semiconductor manufacturers continually seek materials that enable processing with higher throughput and which provide higher yield. 193nm immersion lithography (193i) has been a mainstay in semiconductor manufacturing for many years. However, 193i throughput is constrained by topcoat layers necessitating additional processing steps, and yield is impacted by defectivity resulting from water droplet interactions with wafer surfaces. To overcome these limitations, a platform of high contact angle embedded barrier layer (EBL) materials was developed and EBL polymers were incorporated directly into advanced photoresist formulations, obviating the need for topcoat, permitting faster wafer scan speeds, and lowering defectivity from water droplet rupture or water leakage during immersion processing. These EBL materials were designed with a built-in solubility switch such that they maintain a hydrophobic surface during scanning but can rapidly solubilize in aqueous base developer and rinse away during development, significantly outperforming previous generation designs. This report will detail the development, evaluation, and optimization of new EBL materials with substantially higher contact angles than previous materials for next-generation 193i applications.

Conference Presentation

Citation Download Citation

Joshua Kaitz, Mingqi Li, Ryan Lee, Amy Kwok, Thomas Cardolaccia, Amiel Evans, Choong-Bong Lee, Xisen Hou, and Ke Yang "High contact angle embedded barrier layer materials for next-generation 193 immersion lithography", Proc. SPIE 11612, Advances in Patterning Materials and Processes XXXVIII, 116120U (22 February 2021); https://doi.org/10.1117/12.2583735

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