Enhanced NiOx hole transport layer via graphene assisted annealing for perovskite solar cell

Zhong Hong; Zhujing Zhan; Xiyuan Liu; Hengda Qiu; Hang Zhou

doi:10.1117/12.2585347

4 December 2020 Enhanced NiO_x hole transport layer via graphene assisted annealing for perovskite solar cell

Zhong Hong, Zhujing Zhan, Xiyuan Liu, Hengda Qiu, Hang Zhou

Author Affiliations +

Proceedings Volume 11617, International Conference on Optoelectronic and Microelectronic Technology and Application; 116172K (2020) https://doi.org/10.1117/12.2585347
Event: International Conference on Optoelectronic and Microelectronic Technology and Application, 2020, Nanjing, China

Abstract

Nonstoichiometric nickel oxide (NiO_x) hole transport layer (HTL) plays an important role in realizing high efficient and hysteresis-free perovskite solar cells (PSCs). Here, we report a precursor additive approach for forming high-quality solution processed NiO_x interlayer. A small quantity of reduced graphene oxide (rGO) is added to the conventional NiO_x precursor. It is found that the modified precursor lead to an improved hole extraction efficiency and uniformity of the NiO_x thin film. Statistically, compared to non-modified NiO_x precursor, perovskite solar cells based on NiO_x:rGO precursor have higher short-circuit current densities (Jsc) and higher fill factors (FF).

Citation Download Citation

Zhong Hong, Zhujing Zhan, Xiyuan Liu, Hengda Qiu, and Hang Zhou "Enhanced NiO_x hole transport layer via graphene assisted annealing for perovskite solar cell", Proc. SPIE 11617, International Conference on Optoelectronic and Microelectronic Technology and Application, 116172K (4 December 2020); https://doi.org/10.1117/12.2585347

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