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15 March 2023 Continuous-wave operation of long-cavity m-plane GaN-based vertical-cavity surface-emitting lasers with a topside curved mirror and nanoporous GaN DBR
Nathan C. Palmquist, Ryan Anderson, Jared A. Kearns, Joonho Back, Emily Trageser, Stephen Gee, Stephen P. Denbaars, Shuji Nakamura
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Proceedings Volume 12421, Gallium Nitride Materials and Devices XVIII; 124210I (2023) https://doi.org/10.1117/12.2659822
Event: SPIE OPTO, 2023, San Francisco, California, United States
Abstract
We demonstrate long cavity (60.5 ) GaN-based vertical-cavity surface-emitting lasers (VCSELs) with a topside curved monolithic GaN lens, a buried tunnel junction (BTJ) current aperture, and a bottomside nanoporous GaN distributed Bragg reflector (DBR). Under pulsed operation (1% duty cycle, 1μs pulse), a VCSEL with a 9μm diameter aperture had a threshold current density of 6.6kA/cm2, a maximum output power of 3mW, and a differential efficiency of 5.6% for a lasing mode at 411nm. Under CW operation, the threshold current density was 7.3kA/ cm2, the differential efficiency was 2.8%, and a peak output power of 1.1mW at rollover was reached. Preliminary farfield patterns are presented and discussed.
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Nathan C. Palmquist, Ryan Anderson, Jared A. Kearns, Joonho Back, Emily Trageser, Stephen Gee, Stephen P. Denbaars, and Shuji Nakamura "Continuous-wave operation of long-cavity m-plane GaN-based vertical-cavity surface-emitting lasers with a topside curved mirror and nanoporous GaN DBR", Proc. SPIE 12421, Gallium Nitride Materials and Devices XVIII, 124210I (15 March 2023); https://doi.org/10.1117/12.2659822
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KEYWORDS
Vertical cavity surface emitting lasers
Gallium nitride
Continuous wave operation
Atomic layer deposition
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