Optimization method for thermal instability of silicon-carbide-based vertical double diffused metal-oxide field effect transistor

Xuan Zhang; Xiaoling Zhang; Xuesong Xie; Wanbin Wang

doi:10.1117/12.2668218

20 April 2023 Optimization method for thermal instability of silicon-carbide-based vertical double diffused metal-oxide field effect transistor

Xuan Zhang, Xiaoling Zhang, Xuesong Xie, Wanbin Wang

Author Affiliations +

Proceedings Volume 12602, International Conference on Electronic Information Engineering and Computer Science (EIECS 2022); 1260212 (2023) https://doi.org/10.1117/12.2668218
Event: International Conference on Electronic Information Engineering and Computer Science (EIECS 2022), 2022, Changchun, China

Abstract

In order to explore the thermal instability of Silicon Carbide Based Vertical Double Diffused Metal-Oxide Field Effect Transistor（SiC VDMOS） at high temperature, it has been shown that the temperature coefficient of the device saturation current has a change from positive to negative, and it is speculated that this is related to the change of the threshold voltage. Based on this, this paper builds a high-temperature test platform for the electrical parameters of SiC VDMOS, and tests the output and transfer characteristics and threshold voltage of SiC VDMOS in the operating temperature range of 300K ~ 475K, which verifies the correctness of this view. It is preliminarily determined that the change of the threshold voltage is related to the interface state, A 1.2 kV SiC VDMOS high temperature simulation model based on Silvaco TCAD was built. By using high-K dielectrics with different dielectric constants including Al2O3, Si3N4, and HfO2 as gate materials, and comparing their respective zero temperature coefficient points, it is found that the thermal stability of the device is greatly improved after using high-K dielectrics. The correctness of the speculation is verified.

Citation Download Citation

Xuan Zhang, Xiaoling Zhang, Xuesong Xie, and Wanbin Wang "Optimization method for thermal instability of silicon-carbide-based vertical double diffused metal-oxide field effect transistor", Proc. SPIE 12602, International Conference on Electronic Information Engineering and Computer Science (EIECS 2022), 1260212 (20 April 2023); https://doi.org/10.1117/12.2668218

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