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4 April 2023 Design of non-equilibrium photovoltaic High-Operating-Temperature (HOT) mid-wavelength infrared HgCdTe detector
Jianyun Yu, Jincheng Kong, Gang Qin, Qiang Qin, Wenbin Qi, Linwei Song, XiongJun Li, Dafan Zuo, Yanhui Li, Jun Zhao, Peng Zhao
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Proceedings Volume 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications; 126174V (2023) https://doi.org/10.1117/12.2666394
Event: 9th Symposium on Novel Photoelectronic Detection Technology and Applications (NDTA 2022), 2022, Hefei, China
Abstract
Non-equilibrium photovoltaic HgCdTe detector with a P+ νN+ structure has been demonstrated to work at high temperature, in which carriers were swept out in a non-equilibrium condition, resulting in a significant decrease of carrier concentration. The P+ -type layer grown by Molecular Beam Epitaxy (MBE) is achieved by arsenic (As) doping, followed by high temperature annealing to activate As. However, due to the annealing temperature is higher than 400 °C, interdiffusion of cations (cadmium (Cd) ion and mercury (Hg) ion) can easily take place in such a high temperature, leading to a higher Cd component and shorter absorption region in the absorber layer, which can ultimately decrease the optical absorption and quantum efficiency of the device. Herein, we proposed a P+G4G3νG2G1N+ heterostructure, which can effectively trap the Cd ions diffusing from the P+ and N+ regions due to the component low-lying area between G4G3 and G2G1. In this work, we firstly investigated the performance using Silvaco, the simulation results indicated that this P+G4G3νG2G1N+ heterostructure can effectively achieve Auger suppression at 200K. High quality and uniform HgCdTe epilayers on CdZnTe substrate were fabricated. The effective thickness of the absorption layer after annealing reduced by more than 1.5 μm due to interdiffusion of the Cd ions in a conventional P+ νN+ structure. In sharp contrast, the effective thickness of the absorption layer after annealing reduced within 0.5 μm in the as-designed P+G4G3νG2G1N+, indicating an inspired way to fabricate high performance HOT non-equilibrium HgCdTe detector.
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Jianyun Yu, Jincheng Kong, Gang Qin, Qiang Qin, Wenbin Qi, Linwei Song, XiongJun Li, Dafan Zuo, Yanhui Li, Jun Zhao, and Peng Zhao "Design of non-equilibrium photovoltaic High-Operating-Temperature (HOT) mid-wavelength infrared HgCdTe detector", Proc. SPIE 12617, Ninth Symposium on Novel Photoelectronic Detection Technology and Applications, 126174V (4 April 2023); https://doi.org/10.1117/12.2666394
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KEYWORDS
Mercury cadmium telluride
Cadmium
Heterojunctions
Sensors
Annealing
Absorption
Ions
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