Paper
15 July 1994 Long-wave mercury cadmium telluride infrared detector of zero-tunnel-leakage current
Wenzhong Yang, Changshu Wu, Honggui Zhang
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Abstract
We have used the liquid phase epitaxy (LPE) and vapor phase transport epitaxy (VPTE) growth methods to fabricate double heterojunction (DH) CaTe/HgCaTe/CaZnTe and heterojunction CaTe/HgCaTe thin film materials. The detector of zero tunnel leakage current has been developed successfully by using these materials. The advantages of the VPTE method are as follows: (1) There is increased stability of surface of detector; (2) bulk band-to-band tunnel effect in detector will not occur and trap- assisted tunnel effect will be reduced owing to the N+-p junction and IR absorption region of the detector separated by using this DH material; (3) Ro is enhanced at the same time, so that sensing circuit of FPA can attain much higher injection efficiency; (4) we overcome mother solution of the Te-rich back melt HgCaTe by LPE growth CaTe on HgCaTe/CaZnTe, and (5) this growth method hardly changes characteristics of HcCgTe.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Wenzhong Yang, Changshu Wu, and Honggui Zhang "Long-wave mercury cadmium telluride infrared detector of zero-tunnel-leakage current", Proc. SPIE 2225, Infrared Detectors and Focal Plane Arrays III, (15 July 1994); https://doi.org/10.1117/12.179704
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KEYWORDS
Infrared sensors

Liquid phase epitaxy

Sensors

Infrared detectors

Mercury cadmium telluride

Heterojunctions

Absorption

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