Design of high-performance near-infrared photodetectors based on composition-tunable InxGa1-xAs nanowires

Huan Qian; Yanbin Yang; Yonghao Ma; Lifan Shen

doi:10.1117/12.2686722

6 August 2023 Design of high-performance near-infrared photodetectors based on composition-tunable In_xGa_1-xAs nanowires

Huan Qian, Yanbin Yang, Yonghao Ma, Lifan Shen

Author Affiliations +

Proceedings Volume 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023); 127810C (2023) https://doi.org/10.1117/12.2686722
Event: 2023 International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 2023, Guangzhou, JS, China

Abstract

InGaAs nanowires (NWs) are an important tunable direct bandgap III-V semiconductor nanomaterial, which have wide applications in the field of near-infrared photoelectric detections. In this work, high-quality In_xGa_1-xAs NWs with different compositions (In_0.35Ga_0.65As, In_0.41Ga_0.59As, In_0.53Ga_0.47As) are synthesized by two-step chemical vapor deposition. With the increase of In component of In_xGa_1-xAs NWs, the photocurrent and the responsivity of the photodetectors increase under the same optical power density. More importantly, high-performance near-infrared photodetectors are achieved based on the as-grown In-rich In_0.53Ga_0.47As NWs with a large responsivity of 5.01×10³ A/W and a high detectivity of 8.22×10¹⁰ Jones under 1064 nm irradiation. This work indicates the great application potential of In_xGa_1-xAs NWs for next-generation high-performance semiconductor optoelectronic devices.

Citation Download Citation

Huan Qian, Yanbin Yang, Yonghao Ma, and Lifan Shen "Design of high-performance near-infrared photodetectors based on composition-tunable In_xGa_1-xAs nanowires", Proc. SPIE 12781, International Conference on Optoelectronic Information and Functional Materials (OIFM 2023), 127810C (6 August 2023); https://doi.org/10.1117/12.2686722

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