InGaAs nanowires (NWs) are an important tunable direct bandgap III-V semiconductor nanomaterial, which have wide applications in the field of near-infrared photoelectric detections. In this work, high-quality InxGa1-xAs NWs with different compositions (In0.35Ga0.65As, In0.41Ga0.59As, In0.53Ga0.47As) are synthesized by two-step chemical vapor deposition. With the increase of In component of InxGa1-xAs NWs, the photocurrent and the responsivity of the photodetectors increase under the same optical power density. More importantly, high-performance near-infrared photodetectors are achieved based on the as-grown In-rich In0.53Ga0.47As NWs with a large responsivity of 5.01×103 A/W and a high detectivity of 8.22×1010 Jones under 1064 nm irradiation. This work indicates the great application potential of InxGa1-xAs NWs for next-generation high-performance semiconductor optoelectronic devices.
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