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1 October 1990 Digital gallium arsenide circuit approaches for associative memory applications
G. Todd Cokinos, Sal F. Nati
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Proceedings Volume 1291, Optical and Digital Gallium Arsenide Technologies for Signal Processing Applications; (1990) https://doi.org/10.1117/12.21018
Event: 1990 Technical Symposium on Optics, Electro-Optics, and Sensors, 1990, Orlando, FL, United States
Abstract
As associative memories begin playing an Increasingly Important role In the desIgn of hIgh-performance systems novel circuit desIgn and chip architecture approaches for these devices become crucial. Currently designed exclusively in silicon associative memory circuits have recently been introduced as commercial parts. While not as mature as silicon gallium arsenide (GaAs) may hold a key for providing several advantages over silicon in associative memory performance. This paper will address the technical issues surrounding the application of GaAs in the design of associative memory circuits. Several current silicon applications of associative memory will be described. An overview of some of the most recent circuit developments will be included along with a description of some of the prominent features of available associative memories. GaAs will then be introduced as a technology which holds certain key advantages over silicon. These features stand to dramatically improve the speed and processing capability of logic which is found in most associative memory. A novel GaAs associative memory test circuit under development will be discussed and the overall theme that a GaAs associative memory may provide an important role In future highperformance systems will be presented. 1 .
© (1990) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
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G. Todd Cokinos and Sal F. Nati "Digital gallium arsenide circuit approaches for associative memory applications", Proc. SPIE 1291, Optical and Digital Gallium Arsenide Technologies for Signal Processing Applications, (1 October 1990); https://doi.org/10.1117/12.21018
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KEYWORDS
Gallium arsenide
Content addressable memory
Silicon
Digital electronics
Logic
Computer aided design
Field effect transistors
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