Improving OPC model accuracy of dry resist for low k1 EUV patterning

Dongbo Xu; Werner Gillijns; Stewart Wu; Shruti Jambaldinni; Benjamin Kam; Anuja De Sliva; Germain Fenger

doi:10.1117/12.3010127

10 April 2024 Improving OPC model accuracy of dry resist for low k1 EUV patterning

Dongbo Xu, Werner Gillijns, Stewart Wu, Shruti Jambaldinni, Benjamin Kam, Anuja De Sliva, Germain Fenger

Proceedings Volume 12954, DTCO and Computational Patterning III; 129540L (2024) https://doi.org/10.1117/12.3010127
Event: SPIE Advanced Lithography + Patterning, 2024, San Jose, California, United States

Abstract

Extreme ultraviolet lithography (EUVL) with a NA of 0.33 has been part of high-volume manufacturing since 2019. To guarantee the downscaling of the technology node, advanced material and patterning becomes very critical in terms of resolution, roughness, defectivity and process window. Therefore, several entities are developing new resists and processes. However, to adopt new resist and process into the production, performing model based optical proximity correct (OPC) is an essential step. Thus, an accurate OPC model is required. In this paper, we investigate the calibre CM1 OPC model accuracy of dry resist process, which is conducted on N5 M2 design (pitch 32nm).

Conference Presentation

(2024) Published by SPIE. Downloading of the abstract is permitted for personal use only.

Citation Download Citation

Dongbo Xu, Werner Gillijns, Stewart Wu, Shruti Jambaldinni, Benjamin Kam, Anuja De Sliva, and Germain Fenger "Improving OPC model accuracy of dry resist for low k1 EUV patterning", Proc. SPIE 12954, DTCO and Computational Patterning III, 129540L (10 April 2024); https://doi.org/10.1117/12.3010127

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