Optoelectronic neuron

Jacques I. Pankove; Christian V. Radehaus; Gustaaf Borghs

doi:10.1117/12.24290

1 March 1991 Optoelectronic neuron

Jacques I. Pankove, Christian V. Radehaus, Gustaaf Borghs

Proceedings Volume 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization; (1991) https://doi.org/10.1117/12.24290
Event: Physical Concepts of Materials for Novel Optoelectronic Device Applications, 1990, Aachen, Germany

Abstract

A pnpn photothyristor structure made of ITT-V semiconductors may function as an optoelectronic neuron. The input and output can be electrical and/or optical. The device responds to light and can emit light. The device is endowed with thresholding and memory capabilities. A group of such devices can be integrated in an array to form a neural net capable of inter-neuron interactions that include global and local inhibition and enhancement of response. These integrated neurons may eventually lead :. o learning and other useful applications.

Citation Download Citation

Jacques I. Pankove, Christian V. Radehaus, and Gustaaf Borghs "Optoelectronic neuron", Proc. SPIE 1361, Physical Concepts of Materials for Novel Optoelectronic Device Applications I: Materials Growth and Characterization, (1 March 1991); https://doi.org/10.1117/12.24290

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