Chlorine or bromine chemistry in reactive ion etching Si-trench etching

Ivo W. Rangelow; Andreas Fichelscher

doi:10.1117/12.48918

1 March 1991 Chlorine or bromine chemistry in reactive ion etching Si-trench etching

Ivo W. Rangelow, Andreas Fichelscher

Proceedings Volume 1392, Advanced Techniques for Integrated Circuit Processing; (1991) https://doi.org/10.1117/12.48918
Event: Processing Integration, 1990, Santa Clara, CA, United States

Abstract

This paper describes the role of chemistry in high anisotropic Si-trench etching. Deep trenches with submicron size have been fabricated using chlorine and bromine with proprietary additive and chlorine or bromine carrier gases. This technique is demonstrated by producing thin Si-membranes for micromechanical and demagnifying ion or electron projection masks. Experiments were done in a commercially available laboratory RIE-reactor for Cl and Br chemistry. The effect of gas pressure which significantly determines the ion mean free path on the angular distribution of ions reaching the substrate is discussed for both chemistries. The aspects of Si-etching initialization and micro contaminations and the use of previous scavenger etch steps are considered. The etching rates and selectivities of Si02 and Si in both chemistries are compared. The mechanisms of the deposition effect on the sidewalls are discussed. Advantages and disadvantages of both chemistries are presented summarly.

Citation Download Citation

Ivo W. Rangelow and Andreas Fichelscher "Chlorine or bromine chemistry in reactive ion etching Si-trench etching", Proc. SPIE 1392, Advanced Techniques for Integrated Circuit Processing, (1 March 1991); https://doi.org/10.1117/12.48918

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