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Computer simulations and i-line phase shift lithography experiments with programmed 5X phase shift reticle defects were used to investigate the effect of opaque and phase-shift layer defects on sub-half-micron lines. Both the simulations and the experiments show that defects in the phase shift layer print larger than corresponding opaque defects, with 0.3-0.4 micrometers defects affecting sub-half-micron critical dimensions by more than the allowable 10%. Inspection of programmed phase shift defects with a prototype mask inspection system confirmed that the system finds the 0.3-0.4 micrometers phase shift defects critical to sub-half-micron lithography.
James N. Wiley,Tao-Yi Fu,Takashi Tanaka,Susumu Takeuchi,Satoshi Aoyama,Junji Miyazaki, andYaichiro Watakabe
"Phase-shift mask pattern accuracy requirements and inspection technology", Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44447
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James N. Wiley, Tao-Yi Fu, Takashi Tanaka, Susumu Takeuchi, Satoshi Aoyama, Junji Miyazaki, Yaichiro Watakabe, "Phase-shift mask pattern accuracy requirements and inspection technology," Proc. SPIE 1464, Integrated Circuit Metrology, Inspection, and Process Control V, (1 July 1991); https://doi.org/10.1117/12.44447