Transformer-coupled plasma technology for sub-half-micron etching

John P. Holland; Brendan R. Richardson; E. Bogle; Wai-Man Li; Yosias Melaku; Huong T. Nguyen; Eric A. Peltzer; Duane C. Gates

doi:10.1117/12.142919

16 April 1993 Transformer-coupled plasma technology for sub-half-micron etching

John P. Holland, Brendan R. Richardson, E. Bogle, Wai-Man Li, Yosias Melaku, Huong T. Nguyen, Eric A. Peltzer, Duane C. Gates

Author Affiliations +

Proceedings Volume 1803, Advanced Techniques for Integrated Circuit Processing II; (1993) https://doi.org/10.1117/12.142919
Event: Microelectronic Processing '92, 1992, San Jose, CA, United States

Abstract

A transformer coupled plasma (TCP) source has been developed for use in the etching of polysilicon films. The TCP is a planar, inductive source which can achieve high density operation (> 10¹² cm^-3) over a large pressure range (1 - 100 mT). The etching characteristics of this source are described and process trends for etch rate, selectivity, and profile microloading are presented. Process requirements for polysilicon films with sub- half micron features are achieved using the TCP source by separately controlling the plasma parameters and the wafer bias.

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John P. Holland, Brendan R. Richardson, E. Bogle, Wai-Man Li, Yosias Melaku, Huong T. Nguyen, Eric A. Peltzer, and Duane C. Gates "Transformer-coupled plasma technology for sub-half-micron etching", Proc. SPIE 1803, Advanced Techniques for Integrated Circuit Processing II, (16 April 1993); https://doi.org/10.1117/12.142919

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