High-voltage structure of MOS transistor for LCD driver circuits application

Kun-Zen Chang; Jinnu-Fu Liou; Mei-Li Chiou; S. W. Chang

doi:10.1117/12.131312

27 October 1992 High-voltage structure of MOS transistor for LCD driver circuits application

Kun-Zen Chang, Jinnu-Fu Liou, Mei-Li Chiou, S. W. Chang

Proceedings Volume 1815, Display Technologies; (1992) https://doi.org/10.1117/12.131312
Event: International Symposium on Optoelectronics in Computers, Communications, and Control, 1992, Hsinchu, Taiwan

Abstract

A high-voltage structure of MOS devices has been proposed in this work. Both NMOS and PMOS devices with the high-voltage structure have been fabricated using standard P-well CMOS process with 3 micrometers design rule. In order to increase the breakdown voltage of junction between drain/source and bulk of MOS devices, the high doping concentration of field region is separated from double-diffused drain/source region of MOS devices in this structure. The breakdown voltage of 65 and 70 V has been obtained for NMOS and PMOS, respectively. The purpose of this work is mainly developing a high-voltage MOS device for the circuits design of LCD drive.

Citation Download Citation

Kun-Zen Chang, Jinnu-Fu Liou, Mei-Li Chiou, and S. W. Chang "High-voltage structure of MOS transistor for LCD driver circuits application", Proc. SPIE 1815, Display Technologies, (27 October 1992); https://doi.org/10.1117/12.131312

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