Paper
1 February 1994 Excitonic recombinations in Cd0.90Mn0.10Te/CdTe heterostructures grown by pulsed-laser evaporation and epitaxy
Alain P. Roth, R. Benzaquen, P. Finnie, P. D. Berger, Jan J. Dubowski
Author Affiliations +
Abstract
Cd0.90Mn0.10Te/CdTe heterostructures grown on CdZnTe substrates by pulsed laser evaporation and epitaxy have been studied by low temperature photoluminescence. The structures were grown from fluxes of Cd-Te and Cd-Mn-Te resulting from the ablation of solid CdTe and Cd1-xMnxTe targets with Nd:YAG and excimer XeCl lasers, respectively. The samples chosen for this work are multiple quantum wells (MQW) and superlattices (SL) with buffer and cap layers of various thicknesses and compositions. They have a fixed nominal quantum well width of 2 nm and barriers varying between 4.5 and 16.5 nm, with several combinations of CdTe and Cd0.90Mn0.10Te buffer and cap layers.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alain P. Roth, R. Benzaquen, P. Finnie, P. D. Berger, and Jan J. Dubowski "Excitonic recombinations in Cd0.90Mn0.10Te/CdTe heterostructures grown by pulsed-laser evaporation and epitaxy", Proc. SPIE 2045, Laser-Assisted Fabrication of Thin Films and Microstructures, (1 February 1994); https://doi.org/10.1117/12.167576
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KEYWORDS
Excitons

Quantum wells

Luminescence

Heterojunctions

Epitaxy

Superlattices

Stereolithography

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